Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

Highly compact 1T-1R architecture (4F2footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting …

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

3D Stackable CNTFET/RRAM 1T1R Array with CNT CMOS Peripheral Circuits as BEOL Buffer Macro for Monolithic 3D Integration with Analog RRAM-based Computing-In-Memory

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

High-Density and High-Reliability Nonvolatile Field-Programmable Gate Array with Stacked 1D2R RRAM Array

A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell.

Fully Integrated 3-D Stackable CNTFET/RRAM 1T1R Array As BEOL Buffer Macro for Monolithic 3-D Integration with Analog RRAM-Based Computing-in-Memory

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Integrated One Diode-One Resistor Architecture in Nanopillar Siox Resistive Switching Memory by Nanosphere Lithography

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Highly Scalable Resistive Switching Memory in Metal Nanowire Crossbar Arrays Fabricated by Electron Beam Lithography

Organic Nonvolatile 2T Memory Cell Employing a NOT‐Gate‐Like Architecture Toward Binary Output Level With Enhanced Noise Tolerance