Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Modulation Effect of Reducing Time on Switching Speed in AlOx/WOx RRAM

The W Oxidation Time Effect on Resistive Switching Speed in AlOx/WOx-based RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Asymmetric Resistive Switching Processes in W:Alox/Woy Bilayer Devices

Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement

Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching

Study of redox reactions in resistive switching processes of AlO x /WO y based bilayer RRAM

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Optimization Of Writing Scheme On 1t1r Rram To Achieve Both High Speed And Good Uniformity

Improving Resistance Uniformity and Endurance of Resistive Switching Memory by Accurately Controlling the Stress Time of Pulse Program Operation

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Effects of Interface Reaction on the Performance of Alox/Wox Bilayer Resistive Switching Memory

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

A CMOS Compatible WOx RRAM with Optimized Switching Operations

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Random telegraph noise and resistance switching analysis of oxide based resistive memory.