Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching
Bin Gao,Jinfeng Kang,Yong Chen,Feifei Zhang,Baoqin Chen,Peng Huang,Lifeng Liu,Xiaoyan Liu,Yangyuan Wang,Xuan Anh Tran,Zhongrui Wang,Hongyu Yu,Albert Chin,Chen, Y.S.
DOI: https://doi.org/10.1109/IEDM.2011.6131573
2011-01-01
Abstract:A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.