Abstract:Resistive random access memory (RRAM) is a potential nonvolatile memory to apply in large-scale integration systems due to its high switching speed and cost-effective priority. Transition metal oxides have been utilized as the switching layer owing to the stable structure and variable oxidation state of transition metals. In this work, a functional RRAM device (Pt/AlOx/ZnO/Ti) was fabricated, and the resistive switching process could be well controlled by the voltage supply. The device exhibited low power consumption (0.586 nW for SET, 0.596 nW for RESET, and forming free), self-current compliance in LRS (106 Ω with approximately 10−5 A), and high cycling endurance (up to 3 ×103 times). The switching mechanism has been discussed in detail and comprehensively analyzed by scanning transmission electron microscope (STEM) and electrons energy loss spectrum (EELS). The results provide strong evidence of the continuous oxygen vacancy filaments in ZnO and discontinuous oxygen-deficient regions in AlOx. The switching mechanism for complex structure RRAM is verified and a potential candidate selection with excellent electrical properties is demonstrated.

A WO_X/AlON Dual-layer Resistive RAM with Low Power and Multi-level Storage Characteristic

Low-Power, Multilevel And Analog Character'S In The Multi-Layer-Oxide Based Rram Devices Compatible With Cmos Technology

Study of Conduction and Switching Mechanisms in Al/Alox/Wox/W Resistive Switching Memory for Multilevel Applications

High-density WOx-based RRAM with a W-doped AlOx insertion layer

Highly uniform bipolar resistive switching with Al2}O 3 buffer layer in robust NbAlO-based RRAM

Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlOx Thin Layer

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Ultralow Power Switching of Ta2O5/AlOXbilayer Synergistic Resistive Random Access Memory

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

High Performance Multilevel Data Storage in Tatin/Hfox/Pt Based Rram Using Bipolar and Unipolar Combined Switching Mode

Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array

Forming-Less Unipolar Taox-Based Rram with Large Cc-Independence Range for High Density Memory Applications

Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Novel bipolar TaOx-based Resistive Random Access Memory

Asymmetric Resistive Switching Processes in W:Alox/Woy Bilayer Devices

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

The storage mechanism of resisitive random access