Abstract:The information explosion inmodern society requires increasingly higher densities in data storage, which is gradually becoming difficult to achieve through traditional binary memory techniques. Resistance switching random access memory (RRAM), as a promising high-density memory solution, is gradually attracting both fundamental and industrial interest. RRAMs consist of two electrodes sandwiching a thin layer of active material that, under an external electric eld, possesses different conductive states, which are considered “0” or “1” for information storage. In addition, due to their simple three-layers structure, RRAMs can be used for three-dimensional stacking and can dramatically expand the information density. Most importantly, if multiple conductive states exist in the active materials, each memory cell can store more than two states, such as “0”, “1”, “2”.. This multilevel RRAM technique is expected to result in a revolutionary enhancement in the information density from 2 to X (where n is the cell density and X is the state number of each cell). Aer decades of intensive research, many inorganic oxides, polymers and small molecules have been found to exhibit multilevel resistive switching behaviours and are thus considered candidate active materials for multilevel RRAMs. However, to enable industrial use, RRAM devices must show good reproducibility, including a high multilevel memory device yield and narrow distribution of OFF/ON1/ON2 switching voltages. Unfortunately, numerous studies have explored new RRAM active materials based on the measurements on individual devices, but statistical data on a large batch are rarely reported. Our recent statistical work demonstrated that

High Performance Multilevel Data Storage in Tatin/Hfox/Pt Based Rram Using Bipolar and Unipolar Combined Switching Mode

Low-Power, Multilevel And Analog Character'S In The Multi-Layer-Oxide Based Rram Devices Compatible With Cmos Technology

A Novel Programming Method for Multilevel RRAM Based on Pulse Width Modulation

Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability

Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

Forming-Less Unipolar Taox-Based Rram with Large Cc-Independence Range for High Density Memory Applications

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

High Performance Low Power Multilevel Oxide Based RRAM Devices Based on TiOxNy/Ga2O3 Hybrid Structure

ing to achieve organic ternary memory with a high device yield and improved performance †

Bipolar One Diode–one Resistor Integration for High-Density Resistive Memory Applications

Switching Behaviors of TiN/HfOx/Pt Based RRAM

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

La-doped BiFeO3 Junction Based Random Access Multilevel Nonvolatile Memory