Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power
Feifei Zhang,Xiang Li,Bin Gao,Bing Chen,Peng Huang,Yihan Fu,Yuansha Chen,Lifeng Liu,Jinfeng Kang,Navab Singh,Lo Guo-Qiang,Dim-Lee Kwong
DOI: https://doi.org/10.1143/jjap.51.04dd08
IF: 1.5
2012-01-01
Japanese Journal of Applied Physics
Abstract:Although Resistive random access memory (RRAM) is a promising alternative for next-generation nonvolatile memory, it still suffers from high switching current/power, resulting in large selectors that are normally in series with resistive devices. In this paper, a novel Dynamic random access memory (DRAM) like one-transistor–one-resistor (1T1R) structure is proposed, in which the source/drain of the transistor also serves as the bottom electrode of the RRAM device. Complementary metal oxide semiconductor (CMOS) compatible Hf-based Si/HfO2/TiN RRAM devices were fabricated and ultralow switching current/power was obtained. The set/reset current can be as low as 50 nA/1.25 nA. The programming power for set and reset is only 18 µW and 1.625 nW, respectively. The mechanism of both Schottky emission and electronic hopping via oxygen vacancy defects is proposed to explain the measured resistive switching characteristics.