2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures
Xiaofan Wang,Ruixi Qiao,Huan Lu,Weiwei He,Ying Liu,Tao Zhou,Dongyang Wan,Qin Wang,Yanpeng Liu,Wanlin Guo
DOI: https://doi.org/10.1002/smll.202310158
IF: 13.3
2024-04-06
Small
Abstract:A 2D selector based on Gr/hBN/WSe2 heterostructure exhibits high bipolar nonlinearity at room temperature. Profit for well‐designed band alignment and proper tunneling barrier, the selector undergoes direct tunneling at low bias while Fowler–Nordheim tunneling at high bias. This proof‐of‐concept demonstration opens up a new paradigm for promoting 2D 1S1R arrays for memory applications. The integration of one‐selector‐one‐resistor crossbar arrays requires the selectors featured with high nonlinearity and bipolarity to prevent leakage currents and any crosstalk among distinct cells. However, a selector with sufficient nonlinearity especially in the frame of device miniaturization remains scarce, restricting the advance of high‐density storage devices. Herein, a high‐performance memory selector is reported by constructing a graphene/hBN/WSe2 heterostructure. Within the temperature range of 300–80 K, the nonlinearity of this selector varies from ≈103 – ≈104 under forward bias, and increases from ≈300 – ≈105 under reverse bias, the highest reported nonlinearity among 2D selectors. This improvement is ascribed to direct tunneling at low bias and Fowler–Nordheim tunneling at high bias. The tunneling current versus voltage curves exhibit excellent bipolarity behavior because of the comparable hole and electron tunneling barriers, and the charge transport polarity can be effectively tuned from N‐type or P‐type to bipolar by simply changing source‐drain bias. In addition, the conceptual memory selector exhibits no sign of deterioration after 70 000 switching cycles, paving the way for assembling 2D selectors into modern memory devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology