Abstract:The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I – V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application

One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors

A high-speed MIM resistive memory cell with an inherent vanadium selector

Nonvolatile Memory: Performance‐Enhancing Selector Via Symmetrical Multilayer Design (adv. Funct. Mater. 13/2019)

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

Conduction Mechanism of A Taox-Based Selector and Its Application in Crossbar Memory Arrays

Flexible Cation-Based Threshold Selector for Resistive Switching Memory Integration

Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO 2 -based RRAM device with a vanadium electrode.

Performance‐Enhancing Selector Via Symmetrical Multilayer Design

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Resistive Switching Memory for High Density Storage and Computing*

Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

Characteristics of Nb-doped SrTiO3 and HfO2-based Selector Devices

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation

Investigating Selectorless Property within Niobium Devices for Storage Applications

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study