Abstract:A selector with Au/MoS2/WSe2/MoS2/Au structure is proposed and experimentally demonstrated through the dry transfer method, which exhibits high nonlinearity and current density based on the punch‐through mechanism. The one‐selector one‐resistor cell is also demonstrated by integrating the n‐p‐n selector and hexagonal boron nitride memory, showing great potential fokr future memory applications. Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low‐temperature processing for ultrahigh‐density data storage. Here, an ultrathin two‐terminal n‐p‐n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low‐temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade‐off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p‐type WSe2 in MoS2/WSe2/MoS2 n‐p‐n selector for a punch‐through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 103 A cm−2) simultaneously. The n‐p‐n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material‐based one‐selector one‐resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.

One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

First Principles Study Of Memory Selectors Using Heterojunctions Of 2d Layered Materials

Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A high-speed MIM resistive memory cell with an inherent vanadium selector

2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures

Flexible Cation-Based Threshold Selector for Resistive Switching Memory Integration

A Two-Step Sensing Circuit for the Hysteresis Loop Selector-Based Resistive Non-Volatile Memory Arrays

2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures (Small 25/2024)

Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays

Nonvolatile Memory: Performance‐Enhancing Selector Via Symmetrical Multilayer Design (adv. Funct. Mater. 13/2019)

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Conduction Mechanism of A Taox-Based Selector and Its Application in Crossbar Memory Arrays

Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Performance‐Enhancing Selector Via Symmetrical Multilayer Design

Characteristics of Nb-doped SrTiO3 and HfO2-based Selector Devices

Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO 2 -based RRAM device with a vanadium electrode.