Abstract:The accumulation and motion of metal ions in the ferroelectric oxide and layered dichalcogenides play a critical role in the development of nonvolatile, adaptive memories for applications in neuromorphic computing. To further simplify and control this fundamental process in electronic devices, anion conductors based memristor is first developed by using layered double hydroxide (LDH) as the active materials, where the intercalated ions in subatomic interlayer have superior ion conductivity exhibiting memristive effect. The results show that LDH memristors exhibit abnormal resistive switching behavior with ON/OFF ratio up to 105 at room temperature with the set/reset voltage distribution of 0.3 V. Further studying reveals that the LDH memristior shows stable abnormal unipolar characteristics, following the space‐charge‐limited current transport theory. In situ conductive atomic force microscopy measurements visualize the formation of conductive channels under external bias and significantly reveal the linear correlation between set voltage and the thickness of LDH with the slope of 0.13 V per molecular layer. The results indicate ions may play the key role in realizing set and reset process. The newly reported resistive switching behavior of LDH may shed lights on the development of more intercalated 2D materials based memristor. The anion conductor based memristors are first investigated with abnormal unipolar resistive switching behavior. The lamellar feature of layered double hydroxide (LDH) endows the construction of ultrathin memristive configuration, exhibiting superior switching ratio and high durability. Both space‐charge‐limited current transport simulation and in situ conductive atomic force microscopy (C‐AFM) measurements suggest the unique conduction mechanism, revealing the potential for intercalated 2D materials in electronic devices.

First Principles Study Of Memory Selectors Using Heterojunctions Of 2d Layered Materials

One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors

2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures

2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures (Small 25/2024)

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Nonvolatile Memory: Performance‐Enhancing Selector Via Symmetrical Multilayer Design (adv. Funct. Mater. 13/2019)

Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

Ultrathin Anion Conductors Based Memristor

Ultralow Off‐State Current and Multilevel Resistance State in Van Der Waals Heterostructure Memristors

2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory

Self-selective van der Waals heterostructures for large scale memory array

Performance‐Enhancing Selector Via Symmetrical Multilayer Design

Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor

Tunable non-volatile memories based on 2D InSe/ h-BN/GaSe heterostructures towards potential multifunctionality

Artificially created interfacial states enabled van der Waals heterostructure memory device

Circuit Level Memory Technologies and Applications based on 2D Materials

Charge-Selective 2D Heterointerface-Driven Multifunctional Floating Gate Memory for In Situ Sensing-Memory-Computing

Super Nonlinear Mixed Ionic Electronic Conducting Thin-Film Selector For Crosspoint Array