Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Self-rectifying Memristors with High Rectification Ratio and Dynamic Linearity for In-Memory Computing

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation

1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature

Thousands of conductance levels in memristors monolithically integrated on CMOS

Truly Electroforming‐Free Memristor Based on TiO 2 ‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption

Controllable High-Performance Memristors Based on 2D Fe2GeTe3 Oxide for Biological Synapse Imitation

Memristors for Memory and Computing Applications

First Principles Study Of Memory Selectors Using Heterojunctions Of 2d Layered Materials

Controllable high-performance memristors based on 2D Fe 2 GeTe 3 oxide for biological synapse imitation

Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor.

Ultrathin Anion Conductors Based Memristor

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Ultralow Off‐State Current and Multilevel Resistance State in Van Der Waals Heterostructure Memristors

Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor

Low-Power Memristor Based on Two-Dimensional Materials

Self-electroforming and High-Performance Complementary Memristor Based on Ferroelectric Tunnel Junctions

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Recent progress in low-voltage memristor for neuromorphic computing

Truly concomitant and independently expressed short- and long-term plasticity in Bi2O2Se-based three-terminal memristor