Truly concomitant and independently expressed short- and long-term plasticity in Bi2O2Se-based three-terminal memristor

Ziyang Zhang,Tianran Li,Yujie Wu,Yinjun Jia,Congwei Tan,Xintong Xu,Guanrui Wang,Juan Lv,Wei Zhang,Yuhan He,Luping Shi,Hailin Peng,Huanglong Li
DOI: https://doi.org/10.48550/arXiv.1810.00898
2018-10-01
Applied Physics
Abstract:Orchestration of diverse synaptic plasticity mechanisms across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable to emulate short- and long-term plasticity (STP and LTP, respectively) concomitantly are essential. However, this fundamental bionic trait has not been reported in any existing memristors where STP and LTP can only be induced selectively because of the inability to be decoupled using different loci and mechanisms. In this work, we report the first demonstration of truly concomitant STP and LTP in a three-terminal memristor that uses independent physical phenomena to represent each form of plasticity. The emerging layered material Bi2O2Se is used in memristor for the first time, opening up the prospects for ultra-thin, high-speed and low-power neuromorphic devices. The concerted action of STP and LTP in our memristor allows full-range modulation of the transient synaptic efficacy, from depression to facilitation, by stimulus frequency or intensity, providing a versatile device platform for neuromorphic function implementation. A recurrent neural circuitry model is developed to simulate the intricate "sleep-wake cycle autoregulation" process, in which the concomitance of STP and LTP is posited as a key factor in enabling this neural homeostasis. This work sheds new light on the highly sophisticated computational capabilities of memristors and their prospects for realization of advanced neuromorphic functions.
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