Abstract:The proliferation of machine learning algorithms in everyday applications such as image recognition or language translation has increased the pressure to adapt underlying computing architectures towards these algorithms. Application specific integrated circuits (ASICs) such as the Tensor Processing Units by Google, Hanguang by Alibaba or Inferentia by Amazon Web Services were designed specifically for machine learning algorithms and have been able to outperform CPU based solutions by great margins during training and inference. As newer generations of chips allow handling of and computation on more and more data, the size of neural networks has dramatically increased, while the challenges they are trying to solve have become more complex. Neuromorphic computing tries to take inspiration from biological information processing systems, aiming to further improve the efficiency with which these networks can be trained or the inference can be performed. Enhancing neuromorphic computing architectures with memristive devices as non-volatile storage elements could potentially allow for even higher energy efficiencies. Their ability to mimic synaptic plasticity dynamics brings neuromorphic architectures closer to the biological role models. So far, memristive devices are mainly investigated for the emulation of the weights of neural networks during training and inference as their non-volatility would enable both processes in the same location without data transfer. In this paper, we explore realisations of different synapses build from memristive ReRAM devices, based on the Valence Change Mechanism. These synapses are the 1R synapse, the NR synapse and the 1T1R synapse. For the 1R synapse, we propose three dynamical regimes and explore their performance through different synapse criteria. For the NR synapse, we discuss how the same dynamical regimes can be addressed in a more reliable way. We also show experimental results measured on ZrO x devices to support our simulation based claims. For the 1T1R synapse, we explore the trade offs between the connection direction of the ReRAM device and the transistor. For all three synapse concepts we discuss the impact of device-to-device and cycle-to-cycle variability. Additionally, the impact of the stimulation mode on the observed behavior is discussed.

Emulating Dynamic Synaptic Plasticity over Broad Timescales with Memristive Device

Engineering the Synaptic Kinetic Process into Memristive Device

Memristors with Diffusive Dynamics As Synaptic Emulators for Neuromorphic Computing

Emulating long-term synaptic dynamics with memristive devices

Emulating short-term synaptic dynamics with memristive devices

Tailor-made synaptic dynamics based on memristive devices

Self-doping memristors with equivalently synaptic ion dynamics for neuromorphic computing.

Full imitation of synaptic metaplasticity based on memristor devices.

Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor

Short-Term and Long-Term Plasticity Mimicked in Low-Voltage Ag/GeSe/TiN Electronic Synapse

Unraveling the Roles of Switching and Relaxation Times in Volatile Electrochemical Memristors to Mimic Neuromorphic Dynamical Features

Mimicking Synaptic Plasticity and Neural Network Using Memtranstors

Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor

Memristor based on α-In2Se3 for emulating biological synaptic plasticity and learning behavior

Self-Adaptive Spike Voltage-dependent Plasticity Emulated by a Metalloporphyrin-Based Memristor

Tailoring Synaptic Plasticity in a Perovskite QD-based Asymmetric Memristor

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

All-electric mimicking synaptic plasticity based on the noncollinear antiferromagnetic device

Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity

Nociceptor‐Enhanced Spike‐Timing‐Dependent Plasticity in Memristor with Coexistence of Filamentary and Non‐Filamentary Switching

Fabrication and Investigation of Ferroelectric Memristors with Various Synaptic Plasticities