Ultrathin SrTiO3-based oxide memristor with both drift and diffusive dynamics as versatile synaptic emulators for neuromorphic computing

Fang Nie,Jie Wang,Hong Fang,Shuanger Ma,Feiyang Wu,Wenbo Zhao,Shizhan Wei,Yuling Wang,Le Zhao,Shishen Yan,Chen Ge,Limei Zheng

DOI: https://doi.org/10.1088/2752-5724/ace3dc

2023-07-05

Materials Futures

Abstract:Artificial synapses are electronic devices that simulate important functions of biological synapses, and therefore are the basic components of artificial neural morphological networks for brain-like computing. A most important objective for developing artificial synapses is to simulate the characteristics of biological synapses as much as possible, especially their self-adaptive ability to external stimuli. Here we have successfully developed an artificial synapse with multiple synaptic functions and highly adaptive characteristic based on a simple SrTiO3/Nb:SrTiO3 heterojunction type memristor. Diverse functions of synaptic learning, such as short-term/long-term plasticity, transition from short- to long-term plasticity, learning-forgetting-relearning behaviors, associative learning and dynamic filtering, are all bio-realistically implemented in a single device. The remarkable synaptic performance is attributed to the fascinating inherent dynamics of oxygen vacancy drift and diffusion, which give arise to the coexistence of volatile- and nonvolatile- type resistive switching. This work reports a multi-functional synaptic emulator with advanced computing capability based on a simple heterostructure, showing great application potential for a compact and low-power neuromorphic computing system.