Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

A high-speed MIM resistive memory cell with an inherent vanadium selector

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

3D Vertical Self-Rectifying Memristor Arrays With Split-Cell Structure, Large Nonlinearity (>104) and fJ-Level Switching Energy

Comparison of 1T1R and 1C1R ReRAM Arrays

Selectively biased tri-terminal vertically-integrated memristor configuration

Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

Hf1-xZrxO2based Bipolar Selector with High Uniformity and High Selectivity for Large-Scale Integration of Memristor Crossbars

Pt/Al 2 O 3 /TaO X /Ta Self-Rectifying Memristor With Record-Low Operation Current (<2 pA), Low Power (fJ), and High Scalability

Memristors for Memory and Computing Applications

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications

Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing

Ultralow Off‐State Current and Multilevel Resistance State in Van Der Waals Heterostructure Memristors

Vertical‐organic‐nanocrystal‐arrays for Crossbar Memristors with Tuning Switching Dynamics Toward Neuromorphic Computing

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension