Abstract:The HfOx/FeOx semiconductor heterojunction self‐rectifying‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and high performance synaptic plasticity is developed for neuromorphic computing. A comprehensive study involving HR‐TEM in situ observation and band model is carried out for this self‐rectifying‐RRAM, showing a great potential in large scale array integration. Sneak‐path current is one of the biggest barriers for large‐scale passive memristor array integration. An ideal self‐rectifying resistance random access memory (SR‐RRAM) is a desirable solution but it has not been demonstrated today for optimizing comprehensive indexes for neuromorphic computing. The HfOx/FeOx semiconductor heterojunction SR‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and synaptic plasticity such as paired‐pulse facilitation (PPF) and the spike‐timing‐dependent plasticity (STDP) for artificial intelligence recognition is developed using the unidirectional conductivity feature of p‐n junction. The electron hopping, tunneling, and blocking in this semiconductor heterojunction that is verified by the energy band mode based on UV photoelectron spectroscopy (UPS) technology and low‐energy inverse photoelectron spectroscopy (LEIPS) and in situ high resolution transmission electron microscopy (HR‐TEM) observation plays a dominant role in the self‐rectifying analog switching behaviors. This work provides energy‐band engineering for the large‐scale memristor array integration, representing a significant advancement in hardware for neuromorphic computing.

3D Vertical Self-Rectifying Memristor Arrays With Split-Cell Structure, Large Nonlinearity (>104) and fJ-Level Switching Energy

Self-rectifying Memristors with High Rectification Ratio and Dynamic Linearity for In-Memory Computing

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing

Pt/Al 2 O 3 /TaO X /Ta Self-Rectifying Memristor With Record-Low Operation Current (<2 pA), Low Power (fJ), and High Scalability

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory.

Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

Resistive Switching Memory for High Density Storage and Computing*

Flexible 3D Memristor Array for Binary Storage and Multi‐states Neuromorphic Computing Applications

Self‐Rectifying Switching Memory Based on HfOx/FeOx Semiconductor Heterostructure for Neuromorphic Computing

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

3D Stackable CNTFET/RRAM 1T1R Array with CNT CMOS Peripheral Circuits as BEOL Buffer Macro for Monolithic 3D Integration with Analog RRAM-based Computing-In-Memory

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

Monolithic 3D Integration of FeFET, Hybrid CMOS Logic and Analog RRAM Array for Energy-Efficient Reconfigurable Computing-In-Memory Architecture.

3D vertical RRAM - Scaling limit analysis and demonstration of 3D array operation

In-Memory Computing With Memristor Arrays

Fully Integrated 3-D Stackable CNTFET/RRAM 1T1R Array As BEOL Buffer Macro for Monolithic 3-D Integration with Analog RRAM-Based Computing-in-Memory