Abstract:Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving penta-layer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable Ferro-valleytricity of penta-layer rhombohedral graphene to develop non-volatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less non-volatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, non-destructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ~ 6 nW required per write operation and ~ 2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed non-volatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

Self-selective van der Waals heterostructures for large scale memory array

Self-rectifying Memristors with High Rectification Ratio and Dynamic Linearity for In-Memory Computing

2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Artificially created interfacial states enabled van der Waals heterostructure memory device

Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures (Small 25/2024)

Nonvolatile Ferroelectric LiNbO3 Domain Wall Crossbar Memory

Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

Versatile Logic and Nonvolatile Memory Based on a Van Der Waals Heterojunction

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

Vertical‐organic‐nanocrystal‐arrays for Crossbar Memristors with Tuning Switching Dynamics Toward Neuromorphic Computing

First Principles Study Of Memory Selectors Using Heterojunctions Of 2d Layered Materials