Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Versatile Logic and Nonvolatile Memory Based on a Van Der Waals Heterojunction

Silicon–van der Waals heterointegration for CMOS-compatible logic-in-memory design

Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

A 2d Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

High‐Speed Optoelectronic Nonvolatile Memory Based on van der Waals Heterostructures

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS2 Thin Films Prepared by Atomic Layer Deposition

Nonvolatile Memristor As a New Platform for Non-Von Neumann Computing

Ferroelectric Domain Wall Memory and Logic

Logic-in-memory based on an atomically thin semiconductor

Artificially created interfacial states enabled van der Waals heterostructure memory device

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Efficient 16 Boolean Logic and Arithmetic Based on Bipolar Oxide Memristors