Abstract:The space and data-exchanging rate and other factors of storage, calculation and communication in the multi-functional low-power chips have become the bottlenecks of the development of integrated circuits. The ultralow power consumption of single-bit erasing/writing, the ultra-small device size, fast operation time and non-volatility are indispensable for high-density and high-speed storage in the future system architecture to satisfy the needs for big data exchanging in the core. The future storage technology consists of employing devices with new principles, such as controlling of electron transition and ionic migration superseding the electron transport, adopting new materials to lower the power consumption and introducing new 3D-stack technology to increase the density. This review focuses on the application of new materials in the non-volatile storage technology, especially the two-dimensional atomic crystals. Two-dimensional atomic crystals have some prominent properties, such as high electron mobility, ultimate ultrathin channel and ultralow surface states with an intrinsic thickness of 0.6‒1.2 nm and abundant band structure, which provide an excellent solution for future storage technology. And they have enormous potential to further scale down to increase the integration level and improve stability, expand the application scenarios and develop new memory devices and they are a new method to break through the bottlenecks of power consumption and integrated level of memories.

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

High‐Speed Optoelectronic Nonvolatile Memory Based on van der Waals Heterostructures

Ultrafast non-volatile flash memory based on van der Waals heterostructures

Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory Via Van Der Waals Heterostructures

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Memory Devices: Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory Via Van Der Waals Heterostructures (adv. Mater. 11/2019)

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

Non-volatile Memory Based on Atomic Crystals

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Versatile Logic and Nonvolatile Memory Based on a Van Der Waals Heterojunction

A Scalable Integration Process for Ultrafast Two-Dimensional Flash Memory

A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Artificially created interfacial states enabled van der Waals heterostructure memory device

Polarized Tunneling Transistor for Ultrafast Memory

A ferroelectric fin diode for robust non-volatile memory

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application