Abstract:High‐speed optoelectronic nonvolatile memory is constructed based on van der Waals heterostructure. This device exhibits exceptional characteristics, including a large storage window ratio (≈75.5%), an extremely high on/off ratio (107), long retention time >10000 s, abundant endurance (>1000 writing/erasing cycles) and ultrafast electrical writing/erasing speed (40 ns). Additionally, the device displays outstanding optoelectronic storage performance. This high‐speed nonvolatile optoelectronic memory has potential applications in the next generation of high‐performance nonvolatile memory. High‐performance optoelectronic nonvolatile memory is promising candidate for next‐generation information memory devices. Here, a floating‐gate memory is constructed based on van der Waals heterostructure, which exhibits a large storage window ratio (≈75.5%) and an extremely high on/off ratio (107), as well as an ultrafast electrical writing/erasing speed (40 ns). The enhanced performance enables as‐fabricated devices to present excellent multilevel data storage, robust retention, and endurance performance. Moreover, stable optical erasing operations can be achieved by illuminating the device with a laser pulse, showcasing outstanding optoelectronic storage performance (optical erasing speed ≈ 2.3 ms). The nonvolatile and high‐speed characteristics of these devices hold significant potential for the integration of high‐performance nonvolatile memory.

Memory Devices: Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory Via Van Der Waals Heterostructures (adv. Mater. 11/2019)

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