Abstract:Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal–oxide–semiconductor (CMOS) circuits, memory-in-computing, and the artificial synapse is the key to the rapid growth in data markets. One of the significant aspects is the development of non-volatile field-effect transistor (NVFET), which possesses the advantage of decoupling the "write" and "read" functions using the third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al2O3 gate insulator, we report a ferroelectric-like NVFET memory and analog synapse that differ from those utilizing polycrystalline-doped HfO2 films. Switchable polarization ( ${P}$ ) is demonstrated in TaN/Al2O3/TaN, TaN/Al2O3/Si, and TaN/Al2O3/Ge stacks, which is attributed to the voltage-modulation of the oxygen vacancy and negative charge dipoles in gate insulator. A TaN/Al2O3/Ge capacitor achieves over 1010 cycles endurance of polarization-voltage measurement. A memory window (MW) of 0.85 V is obtained in the NVFET integrated with Al2O3 insulator under ±3 V at 100 ns program/erase (P/E) condition, and the P/E voltage can be reduced to ±1.6 V. A NVFET analog synapse is demonstrated to have a dynamic range above 100 [asymmetry ( $vert alpha _{p} - alpha _{d} vert $ )< 0.1] with ±2 V/100 ns potentiation/depression pulses. These results can be extended universally to other amorphous oxides and show promise for 3-D (fin-shaped) NVFETs with very small fin pitch.

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory Via Van Der Waals Heterostructures

A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation.

A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

Ambipolar Quantum-Dot-Based Low-Voltage Nonvolatile Memory with Double Floating Gates

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019)

New Floating Gate Memory with Excellent Retention Characteristics

High‐Speed Optoelectronic Nonvolatile Memory Based on van der Waals Heterostructures

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Ambipolar Nonvolatile Memory Based on A Quantum-Dot Transistor with A Nanoscale Floating Gate

Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /H-Bn/graphene Heterostructure.

Sensing Operation A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Flexible Multi-Level Quasi-Volatile Memory Based on Organic Vertical Transistor