Abstract:The non-volatile memory devices based on traditional materials are unable to adapt to the background of the post-Moore era due to high energy consumption and low transmission speed. Therefore, the two-dimensional (2D) materials receive extensive attention on account of their excellent electrical and optical properties. The floating-gate transistors based on MoS2/h-BN/graphene heterojunction possess excellent storage functions. In this paper, the characteristics of MoS2/h-BN/graphene floating-gate transistors are investigated by manufacturing and comparing multiple devices. And the influences of the thickness of the h-BN tunneling layer on the storage functions are also explored. The device with the thickness of h-BN exceed 10 nm obtain the optimal non-volatile and photoelectric storage characteristics. Ultimately, the chosen floating-gate transistor can achieve switching ratio as high as similar to 10(5) at working voltages below 10 V, and also achieve multi-level storage by applying pulses of different amplitudes. And the device has very excellent durability and retention after 1000 cycles working. At the same time, the device also has perfect performance in the process of alternately applying electrical pulses and optical pulses, and finally achieves storage functions of electrical writing and optical erasing. These results prove that the outstanding non-volatile and photoelectric storage characteristics can be effectively achieved in 2D materials heterojunction floating-gate transistors. Therefore, the 2D materials floating-gate transistors will be potential candidate for post-Moore non-volatile memory chip.

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Nonvolatile Ferroelectric Field-Effect Transistors.

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Investigation of Non-Volatile and Photoelectric Storage Characteristics for MoS2/h-BN/graphene Heterojunction Floating-Gate Transistor with the Different Tunneling Layer Thicknesses

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A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

A Semi-Floating Gate Transistor with Enhanced Embedded Tunneling Field-Effect Transistor

High-gate-injection Tunneling Field Effect Transistor for Flash Memory Applications

Non-volatile Bipolar Transistor Memory

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Two-dimensional Ferroelectric Semiconductor Floating-Gate Transistor with Light-Tunable Field Effect for Memory and Photo-Synapse

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Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

High‐Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod–Coil Materials as a Floating Gate