Trace metals in seawater and copepods in the ocean outfall area off the northern Taiwan coast.

T. Fang,Jiang‐Shiou Hwang,Shih-Hui Hsiao,Hung-Yu Chen

DOI: https://doi.org/10.1016/J.MARENVRES.2005.10.002

IF: 3.737

2006-03-01

Marine Environmental Research

Abstract:

What problem does this paper attempt to address?

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

Meili Xu,Lanyi Xiang,Ting Xu,Wei Wang,Wenfa Xie,Dayu Zhou

DOI: https://doi.org/10.1063/1.4993857

IF: 4

2017-10-30

Applied Physics Letters

Abstract:Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V−1 s−1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

physics, applied
Speed Up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors

Lei Song,Yu Wang,Qian Gao,Yu Guo,Qijing Wang,Jun Qian,Sai Jiang,Bing Wu,Xinran Wang,Yi Shi,Youdou Zheng,Yun Li

DOI: https://doi.org/10.1021/acsami.7b03785

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted intensive attention because of their promising potential in nonvolatile memory devices. The quick switching between binary states is a significant fundamental feature in evaluating Fe-OFET memories. Here, we employ 2D molecular crystals via a solution-based process as the conducting channels in transistor devices, in which ferroelectric polymer acts as the gate dielectric. A high carrier mobility of up to 5.6 cm2 V-1 s-1 and a high on/off ratio of 106 are obtained. In addition, the efficient charge injection by virtue of the ultrathin 2D molecular crystals is beneficial in achieving rapid operations in the Fe-OFETs; devices exhibit short switching time of ∼2.9 and ∼3.0 ms from the on- to the off-state and from the off- to the on-state, respectively. Consequently, the presented strategy is capable of speeding up Fe-OFET memory devices by using solution-processed 2D molecular crystals.
High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Yu Wang,Takio Kizu,Lei Song,Yujia Zhang,Sai Jiang,Jun Qian,Qijing Wang,Yi Shi,Youdou Zheng,Toshihide Nabatame,Kazuhito Tsukagoshi,Yun Li

DOI: https://doi.org/10.1039/c6tc01768a

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly( vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm(2) V-1 s(-1) in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.
Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Lan Liu,Xiang Hou,Heng Zhang,Jianlu Wang,Peng Zhou

DOI: https://doi.org/10.1088/1361-6528/aba0f3

IF: 3.5

2020-01-01

Nanotechnology

Abstract:The separation of processing and memory units in von Neumann architecture creates issues with energy consumption and speed mismatches, which is a huge obstacle on the road of integrated-circuit development. Potentially, the excellent performance of two-dimensional materials field-effect transistors controlled by organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer could clear the path for the development of next-generation microelectronics. Here, we combined P(VDF-TrFE) polymer and molybdenum disulfide (MoS2) nanoflakes to fabricate a horizontal dual-gate ferroelectric field-effect transistor (HDG-FeFET) device. This device can provide in-situ memory of logic results while processing the AND logic function. During the logic operations, the logic output state-1/state-0 current ratio approached 105. After 900 s, the corresponding non-volatile memory state-1/state-0 current ratio remains at 104. This type of transistor is expected to provide a promising in-memory computing solution for next-generation computing architecture.
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Zhang Siqing,Liu Yan,Zhou Jiuren,Ma Meng,Gao Anyuan,Zheng Binjie,Li Lingfei,Su Xin,Han Genquan,Zhang Jincheng,Shi Yi,Wang Xiaomu,Hao Yue

DOI: https://doi.org/10.1186/s11671-020-03384-z

2020-01-01

Nanoscale Research Letters

Abstract:Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 107 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (103 cycles) and retention (104 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Qingxuan Li,Siwei Wang,Zhenhai Li,Xuemeng Hu,Yongkai Liu,Jiajie Yu,Yafen Yang,Tianyu Wang,Jialin Meng,Qingqing Sun,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1038/s41467-024-46878-5

IF: 17.694

2024-03-28

NanoScience and Technology

Abstract:With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO 2 (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I ON /I OFF ) of over 10 8 , and high endurance up to 2×10 7 cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorphic properties. The device exhibits excellent bending reliability over 5×10 5 pulse cycles at a bending radius of 5 mm. The efficient integration of hafnium-based ferroelectric materials with promising ultrathin channel materials (ITO) offers unique opportunities to enable high-performance back-end-of-line (BEOL) compatible wearable FeFETs for edge intelligence applications.
High-performance multilevel nonvolatile organic field-effect transistor memory based on multilayer organic semiconductor heterostructures

Yangzhou Qian,Jiayu Li,Wen Li,Ziyi Song,Hao Yu,Ziyi Feng,Wei Shi,Wei Huang,Ming-Dong Yi

DOI: https://doi.org/10.1039/d4tc02842b

IF: 6.4

2024-09-10

Journal of Materials Chemistry C

Abstract:Nonvolatile organic field-effect transistor (OFET) memory devices have great potential for next-generation memory due to their advantages of low cost, light weight, mechanical flexibility and easy processing. However, addressing the issue of limited data storage capacity remains a critical challenge. In this study, we propose a multilevel nonvolatile OFET memory device featuring five-layer organic semiconductor heterostructures composed of pentacene and N , N ′-ditridecylperylene-3,4,9,10-tetracarb-oxylic diimide (P13). The innovative semiconductor heterostructures exhibit quantum well-like characteristics, and efficiently function as charge trapping sites. These characteristics synergize with the charge trapping properties of the polystyrene (PS) layer, resulting in a significant enhancement of the device's charge storage capacity. The organic semiconductor heterostructure-based memory device demonstrates exceptional nonvolatile memory properties, including a large charge storage capacity (5.48 × 10 12 cm −2 ), a high mobility (2.06 cm 2 V −1 s −1 ), a high ON/OFF current ratio (10 5 ), and a long data retention (over 10 4 s). Moreover, a four-level data storage was achieved owing to the device's high charge capacity properties, significantly augmenting memory capacity. This research presents a promising methodology for the realization of high-performance organic memory for future technology.

materials science, multidisciplinary,physics, applied
Nonvolatile Ferroelectric Field-Effect Transistors.

Xiaojie Chai,Jun Jiang,Qinghua Zhang,Xu Hou,Fanqi Meng,Jie Wang,Lin Gu,David Wei Zhang,An Quan Jiang

DOI: https://doi.org/10.1038/s41467-020-16623-9

IF: 16.6

2020-01-01

Nature Communications

Abstract:Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data. The costly dense wire connections in 3D integrated circuits and in conventional packaging and chip-stacking solutions could affect data communication bandwidths, data storage densities, and optical transmission efficiency. Here we investigated all-ferroelectric nonvolatile LiNbO3 transistors to function through redirection of conducting domain walls between the drain, gate and source electrodes. The transistor operates as a single-pole, double-throw digital switch with complementary on/off source and gate currents controlled using either the gate or source voltages. The conceived device exhibits high wall current density and abrupt off-and-on state switching without subthreshold swing, enabling nonvolatile memory-and-sensor-in-logic and logic-in-memory-and-sensor capabilities with superior energy efficiency, ultrafast operation/communication speeds, and high logic/storage densities.
High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate Insulator

Weihao Qi,Shizhang Li,Meili Xu,Wei Wang

DOI: https://doi.org/10.1109/TED.2021.3077199

IF: 3.1

2021-07-01

IEEE Transactions on Electron Devices

Abstract:Low mobility and high operating voltages are bottlenecks in the practical application of ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this article, we demonstrate a high-mobility polymer semiconductor-based Fe-OFET NVM that can well operate at low programming/erasing voltages (<inline-formula> <tex-math notation="LaTeX">${V}_{{\mathrm {P}}}/{V}_{{\mathrm {E}}}$ </tex-math></inline-formula>). The issue that hinders the reduction of the <inline-formula> <tex-math notation="LaTeX">${V}_{{\mathrm {P}}}/{V}_{{\mathrm {E}}}$ </tex-math></inline-formula> in Fe-OFET NVMs is discussed. We develop a route to resolve the issue by building a thin bilayer gate insulator consisted of an ultrathin poly(methyl methacrylate) (PMMA) and a thin poly(vinylidenefluoride-trifluoroethylene) films. The processing compatibility, that is, the tri-layered core architecture consisting of polymer semiconductor and insulator films is prepared by a full-solution technology, is confirmed. The mechanism of the performance improvements by using the ultrathin PMMA in the Fe-OFET NVMs is investigated. As a result, the Fe-OFET NVM exhibits excellent performances at low <inline-formula> <tex-math notation="LaTeX">${V}_{{\mathrm {P}}}/{V}_{{\mathrm {E}}}$ </tex-math></inline-formula> of ±15 V, with a high mobility up to 1.75 cm2/Vs, reliable memory endurance over 400 cycles, and stable memory retention over 65000 s.

Engineering,Physics,Materials Science
2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors

Zhenhui Xian,Changjian Li,Yangda Dong,Mengping Peng,Ye Yu,Yuan Zhang,Boyuan Huang,Gaokuo Zhong,Shuhong Xie,Jiangyu Li

DOI: https://doi.org/10.1002/adfm.202409388

IF: 19

2024-11-28

Advanced Functional Materials

Abstract:The successful development of 2D ferroelectric metal‐organic frameworks (MOF) nanosheets, with a large polarization retained down to 7 nm, enables the fabrication of ferroelectric field effect transistors (FeFETs) with ultralow power consumption and tunable memory windows, ideal for next‐generation memory, and computing devices. 2D ferroelectrics open a new realm of nonvolatile memory and computing devices, while metal–organic frameworks (MOF) offer tremendous possibilities to design and optimize ferroelectric performance. Integrating a MOF ferroelectric gate with a semiconducting channel provides new strategy toward ultralow power ferroelectric field effect transistors (FeFETs), yet no 2D MOF is experimentally demonstrated to be ferroelectric yet. Here, the study successfully develops 2D ferroelectric MOF nanosheets, {CuL2(H2O)2(NO3)2(H2O)1.5·(CH3OH)}∞ wherein L denotes PhPO(NH4Py)2, abbreviated as {CuIIL2}n‐MOF, and confirm its ferroelectricity down to 7 nm thickness. A large polarization of ≈14.2 μC cm−2, small coercive field of ≈33.3 V μm−1, and excellent endurability >106 cycles are found in 2D {CuIIL2}n‐MOF nanosheets. This enables to fabricate FeFETs using 2D {CuIIL2}n‐MOF as the gate and MoS2 as the channel, achieving an on/off ratio of 107 with ultralow off‐state current of 100 fA and tunable memory window, making it exceptional among known FeFETs and very promising for next‐generation ultralow power memories and computing devices

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory

Liping Xu,Zhihua Duan,Peng Zhang,Xiang Wang,Jinzhong Zhang,Liyan Shang,Kai Jiang,Yawei Li,Liangqing Zhu,Yongji Gong,Zhigao Hu,Junhao Chu

DOI: https://doi.org/10.1021/acsami.0c09951

2020-09-15

Abstract:Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory. In FeFETs, the conductivity states of the semiconductor are utilized to explore the polarization directions of the ferroelectric material. Herein, we report FeFETs based on a few layers of MoS2 on a 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single crystal with switchable multilevel states. It was found that the On–Off ratios can reach as high as 106. We prove that the interaction effect of ferroelectric polarization and interface charge traps has a great influence on the transport behaviors and nonvolatile memory characteristics of MoS2/PMN–PT FeFETs. In order to further study the underlying physical mechanism, we have researched the time-dependent electrical properties in the temperature range from 300 to 500 K. The separation of effects from ferroelectric polarization and interfacial traps on electrical behaviors of FeFETs provides us with an opportunity to better understand the operation mechanism, which suggests a fantastic way for multilevel, low-power consumption, and high-density nonvolatile memory devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09951?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09951</a>.In-plane strain curve for the (001)-oriented PMN–PT crystal (Figure S1); the transfer characteristic curves of MoS2–PMN–PT FeFETs (Figures S2 and S3); data retention characteristics of MoS2–PMN–PT FeFETs (Figure S4); measurement-temperature-dependent transport properties of MoS2–PMN–PT FeFETs in the range from 150 to 300 K (Figure S5) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09951/suppl_file/am0c09951_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Qing Zhang,Hao Xiong,Qiangfei Wang,Liping Xu,Menghan Deng,Jinzhong Zhang,Dirk Fuchs,Wenwu Li,Liyan Shang,Yawei Li,Zhigao Hu,Junhao Chu

DOI: https://doi.org/10.1002/aelm.202101189

IF: 6.2

2021-12-28

Advanced Electronic Materials

Abstract:Ferroelectric field‐effect transistors (FeFETs) with 2D semiconductors as channel materials have been fabricated to achieve miniaturized size, high storage, and low power consumption. The FeFETs are studied based on few‐layer MoS2 sheets on the non‐lead Bi0.85La0.15Fe0.92Mn0.08O3 (BLFMO) ferroelectric films with a large remnant polarization (Pr ≈36 μC cm−2). In FeFETs, the conductivity states of the 2D semiconductor can be tuned by the ferroelectric polarization. It is found that the MoS2‐based FeFETs display a large memory windows exceeding 25 V, a high on/off ratio (>105), remarkable program/erase ratio (≈104), competitive retention, endurance, and high‐speed performance. Moreover, the 2D based FeFETs exhibit switchable multi‐bit data storage by applying different amplitudes of negative gate voltage pulses to enhance the data storage density. On the basis of these characteristics, the 2D‐FeFETs are potentially able to meet the need for scalability, capacity, retention, and endurance of nonvolatile memory. Using 2D MoS2 sheets as the channel semiconductor and (La, Mn)‐codoped BiFeO3 films as the ferroelectric dielectric, N‐type field‐effect transistors are successfully achieved and exhibit a large memory windows exceeding 25 V, a high on/off ratio about 105, and an obvious multi‐bit memory effect.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Nonvolatile Memory Design Based on Ferroelectric FETs.

Sumitha George,Kaisheng Ma,Ahmedullah Aziz,Xueqing Li,Asif Khan,Sayeef Salahuddin,Meng-Fan Chang,Suman Datta,John Sampson,Sumeet Gupta,Vijaykrishnan Narayanan

DOI: https://doi.org/10.1145/2897937.2898050

2016-01-01

Abstract:Ferroelectric FETs (FEFETs) offer intriguing possibilities for the design of low power nonvolatile memories by virtue of their three-terminal structure coupled with the ability of the ferroelectric (FE) material to retain its polarization in the absence of an electric field. Utilizing the distinct features of FEFETs, we propose a 2-transistor (2T) FEFET-based nonvolatile memory with separate read and write paths. With proper co-design at the device, cell and array levels, the proposed design achieves non-destructive read and lower write power at iso-write speed compared to standard FE-RAM. In addition, the FEFET-based memory exhibits high distinguishability with six orders of magnitude difference in the read currents corresponding to the two states. Comparative analysis based on experimentally calibrated models shows significant improvement of access energy-delay. For example, at a fixed write time of 550ps, the write voltage and energy are 58.5% and 67.7% lower than FERAM, respectively. These benefits are achieved with 2.4 times the area overhead. Further exploration of the proposed FEFET memory in energy harvesting nonvolatile processors shows an average improvement of 27% in forward progress over FERAM.
ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Huan Liu,Chengxu Wang,Genquan Han,Jing Li,Yue Peng,Yan Liu,Xingsheng Wang,Ni Zhong,Chungang Duan,Xinran Wang,Nuo Xu,Tsu-Jae King Liu,Yue Hao

DOI: https://doi.org/10.1109/led.2019.2930458

IF: 4.8157

2019-01-01

IEEE Electron Device Letters

Abstract:We demonstrate for the first time ZrO2 ferroelectric field-effect transistors (FeFETs) for embedded non-volatile memory applications. Multiple sweeps of polarization versus voltage measurement demonstrate that a metal/ZrO2/Ge capacitor is entirely free of wake-up effect and has significantly improved fatigue characteristics compared to a HfZrOx control device. Thanks to relatively small remnant polarization and a high-quality ZrO2/Ge interface, up to 10(7) cycles program/erase endurance, 10 ns program/erase speed, and >10-year data retention at 85 degrees C are achieved.
Field-effect transistor memories based on ferroelectric polymers

Yujia Zhang,Haiyang Wang,Lei Zhang,Xiaomeng Chen,Yu Guo,Huabin Sun,Yun Li

DOI: https://doi.org/10.1088/1674-4926/38/11/111001

2017-01-01

Journal of Semiconductors

Abstract:Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their nonvolatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications.
A Ferroelectric Semiconductor Field-Effect Transistor

Mengwei Si,Atanu K. Saha,Shengjie Gao,Gang Qiu,Jingkai Qin,Yuqin Duan,Jie Jian,Chang Niu,Haiyan Wang,Wenzhuo Wu,Sumeet K. Gupta,Peide D. Ye

DOI: https://doi.org/10.1038/s41928-019-0338-7

2020-01-10

Abstract:Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide ({\alpha}-In2Se3), is used as the channel material in the device. {\alpha}-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 {\mu}A {\mu}m-1, and a low supply voltage.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science
Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory Via Buffering Interfacial Polarization Fluctuation

Huabin Sun,Qijing Wang,Yun Li,Yen-Fu Lin,Yu Wang,Yao Yin,Yong Xu,Chuan Liu,Kazuhito Tsukagoshi,Lijia Pan,Xizhang Wang,Zheng Hu,Yi Shi

DOI: https://doi.org/10.1038/srep07227

IF: 4.6

2014-01-01

Scientific Reports

Abstract:Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μ FET ) up to 4.6 cm 2 V −1 s −1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the “reading” and “programming” speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Houfang Liu,Tianqi Lu,Yuxing Li,Zhenyi Ju,Ruiting Zhao,Jingzhou Li,Minghao Shao,Hainan Zhang,Renrong Liang,Xiao Renshaw Wang,Rui Guo,Jingsheng Chen,Yi Yang,Tian‐Ling Ren

DOI: https://doi.org/10.1002/advs.202001266

IF: 15.1

2020-08-07

Advanced Science

Abstract:Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5 × 105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Low 3 volt operation of 2D MoTe 2 ferroelectric memory transistors with ultrathin pinhole-free P(VDF-TrFE) crystalline film

Han Joo Lee,Yongjae Cho,Jeehong Park,Hyunmin Cho,Hyowon Han,Cheolmin Park,Yeonjin Yi,Tae Kyu An,Ji Hoon Park,Seongil Im

DOI: https://doi.org/10.1016/j.mser.2024.100859

2024-10-05

Materials Science and Engineering: R: Reports

Abstract:Organic ferroelectric crystalline polymer, P(VDF-TrFE) has attracted broad attentions due to its lead-free benefits and process convenience. However, it has a long-standing drawback, its process limit in crystalline film thickness, whose minimum is almost fixed as ∼100 nm. Hence, operation voltage of any P(VDF-TrFE)-based ferroelectric memory field-effect transistors (FeFETs) has always been over 10 V. Here, innovatively thinned ∼20 nm P(VDF-TrFE) crystalline layers are fabricated on Pt and Au gate, empowering FeFETs with two dimensional (2D) MoTe 2 channel to operate under minimum 3 V pulse. Such thin crystalline layer is achieved through spin-coating after initial growth of 5 nm-thin crystalline seed layer, P(VDF-TrFE)-brush. This ultrathin P(VDF-TrFE)-brush effectively inhibits the de-wetting problem of P(VDF-TrFE)-solution during spin-coating, leading to good surface-energy matching and pinhole-free conformal coating of classical P(VDF-TrFE). As a result, 3–4 V pulse operations of p-MoTe 2 nonvolatile memory FETs are nicely realized without leakage current loss. These numbers may be regarded as one of the lowest values in report.

materials science, multidisciplinary,physics, applied
Determining the Influence of Ferroelectric Polarization on Electrical Characteristics in Organic Ferroelectric Field-Effect Transistors

Fu Zong-Yuan,Zhang Jian-Chi,Hu Jing-Hang,Jiang Yu-Long,Ding Shi-Jin,Zhu Guo-Dong

DOI: https://doi.org/10.1088/1674-1056/24/5/058502

2015-01-01

Abstract:Organic ferroelectric field-effect transistors（OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.

Trace metals in seawater and copepods in the ocean outfall area off the northern Taiwan coast.

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

Speed Up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

High-performance multilevel nonvolatile organic field-effect transistor memory based on multilayer organic semiconductor heterostructures

Nonvolatile Ferroelectric Field-Effect Transistors.

High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate Insulator

2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors

Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Nonvolatile Memory Design Based on Ferroelectric FETs.

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Field-effect transistor memories based on ferroelectric polymers

A Ferroelectric Semiconductor Field-Effect Transistor

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory Via Buffering Interfacial Polarization Fluctuation

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Low 3 volt operation of 2D MoTe 2 ferroelectric memory transistors with ultrathin pinhole-free P(VDF-TrFE) crystalline film

Determining the Influence of Ferroelectric Polarization on Electrical Characteristics in Organic Ferroelectric Field-Effect Transistors