Abstract:Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory. In FeFETs, the conductivity states of the semiconductor are utilized to explore the polarization directions of the ferroelectric material. Herein, we report FeFETs based on a few layers of MoS2 on a 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single crystal with switchable multilevel states. It was found that the On–Off ratios can reach as high as 106. We prove that the interaction effect of ferroelectric polarization and interface charge traps has a great influence on the transport behaviors and nonvolatile memory characteristics of MoS2/PMN–PT FeFETs. In order to further study the underlying physical mechanism, we have researched the time-dependent electrical properties in the temperature range from 300 to 500 K. The separation of effects from ferroelectric polarization and interfacial traps on electrical behaviors of FeFETs provides us with an opportunity to better understand the operation mechanism, which suggests a fantastic way for multilevel, low-power consumption, and high-density nonvolatile memory devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09951?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09951</a>.In-plane strain curve for the (001)-oriented PMN–PT crystal (Figure S1); the transfer characteristic curves of MoS2–PMN–PT FeFETs (Figures S2 and S3); data retention characteristics of MoS2–PMN–PT FeFETs (Figure S4); measurement-temperature-dependent transport properties of MoS2–PMN–PT FeFETs in the range from 150 to 300 K (Figure S5) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09951/suppl_file/am0c09951_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Low 3 volt operation of 2D MoTe 2 ferroelectric memory transistors with ultrathin pinhole-free P(VDF-TrFE) crystalline film

Low-voltage Organic Ferroelectric Field Effect Transistors Using Langmuir–Schaefer Films of Poly(vinylidene Fluoride-Trifluororethylene)

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory

Ferroelectric Fet for Nonvolatile Memory Application with Two-Dimensional Mose2 Channels

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories

2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate Insulator

Ultrathin TIO2 Channel HfLaO FeFET with Low Operation Voltage

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics