Abstract:HfO2-based ferroelectric field-effect transistors (FeFETs) are a promising candidate for multilevel memory manipulation and brain-like computing due to the multi-domain properties of the HfO2 FE films based polycrystalline structure. Although there have been many reports on the working mechanism of the HfO2-based FeFET and improving its reliability, the impact of multi-domain effect on the effective carrier mobility (μchannel) has not been carried out yet. The effective μchannel determines the level of readout current and affects the accuracy of the precision of peripheral circuit. In this work, FeFETs with HfZrOx FE gate dielectric were fabricated, and the effect of write (or erase) pulses with linear gradient variation on the effective μchannel was studied. For the multiple downward polarization under write pulses, the μchannel degrades as the domains gradually switch to downward. This is mainly due to the enhancement of the scattering effect induced by the positive charges (e.g., oxygen vacancies ) trapping and the increase of channel carrier density. For the erase pulses, the μchannel increases as the domains gradually reverse to upward, which is mainly due to the reduction of the scattering effect induced by the detrapping of positive charges and the decrease of channel carrier density. In addition, the modulation effect of multilevel polarization states on μchannel is verified by numerical simulation. This effect provides a new idea and solution for the development of low power HfO2-based FeFETs in neuromorphic computing.

Determining the Influence of Ferroelectric Polarization on Electrical Characteristics in Organic Ferroelectric Field-Effect Transistors

Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors

Impacts of Ferroelectric Parameters on the Electrical Characteristics of Fefet for Low-Power Logic and Memory Applications

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory Via Buffering Interfacial Polarization Fluctuation

Erase Efficiency Improvement of Ferroelectric FET with IGZO Channel by P-Type SnOx Layer

Impact of ZnO Polarization on the Characteristics of Metal–Ferroelectric–ZnO Field Effect Transistor

pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Polarization Fatigue in Ferroelectric Vinylidene Fluoride and Trifluoroethylene Copolymer Thin Films

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2

Exploration of structural influences on ferroelectric switching characteristics in ferroelectric thin-film transistors

Mechanism of polarization fatigue in BiFeO 3

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors

Polarization fatigue of ferroelectric Pb(Zr_xTi_(1-x_)O_3 thin films revisited

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

Piezoresponse Force Microscopy Study on Ferroelectric Polarization of Ferroelectric Polymer Thin Films with Various Structural Configurations