Abstract:Because of their compatibility with modern Si-based technology, HfO2-based ferroelectric films have recently attracted attention as strong candidates for applications in memory devices, in particular, ferroelectric field-effect transistors or ferroelectric tunnel junctions. A key property defining the functionality of these devices is the polarization dependent change of the electronic band alignment at the metal/ferroelectric interface. Here, we report on the effect of polarization reversal in functional ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors on the potential distribution across the stack and the electronic band line-up at the interfaces studied in operando by hard X-ray photoemission spectroscopy. By tracking changes in the position of Hf0.5Zr0.5O2 core-level lines with respect to those of the TiN electrode in both short- and open-circuit configurations following in situ polarization reversal, we derive the conduction band offset to be 0.7 (1.0) eV at the top and 1.7 (1.0) eV at the bottom interfaces for polarization, pointing up (down), respectively. Energy dispersive X-ray spectroscopy profiling of the sample cross-section in combination with the laboratory X-ray photoelectron spectroscopy reveal the presence of a TiOx/TiON layer at both interfaces. The observed asymmetry in the band line-up changes in the TiN/Hf0.5Zr0.5O2/TiN memory stack is explained by different origin of these oxidized layers and effective pinning of polarization at the top interface. The described methodology and first experimental results are useful for the optimization of HfO2-based ferroelectric memory devices under development.

Impact of ZnO Polarization on the Characteristics of Metal–Ferroelectric–ZnO Field Effect Transistor

Determining the Influence of Ferroelectric Polarization on Electrical Characteristics in Organic Ferroelectric Field-Effect Transistors

Erase Efficiency Improvement of Ferroelectric FET with IGZO Channel by P-Type SnOx Layer

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films

A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films Through Interfacial Bound Charges

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Zno field-effect transistors with lead-zirconate-titanate ferroelectric gate

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt Structure

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO 2 -ZrO 2 -HfO 2 and ZrO 2 -HfO 2 -ZrO 2 Superlattice Ferroelectric Films

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy

Modulation Effect of Lead Zirconate Titanate for Zinc Oxide Channel Resistance in Ferroelectric Field Effect Transistor