Abstract:The impact of the arrangement of HfO2 dielectric layers in Hf0.5Zr0.5O2‐based ferroelectric tunnel junctions is systematically analyzed. Furthermore, the reservoir computing system is implemented by using the MFIS‐structured FTJ, which has better performance, as a reservoir layer, and the accuracy of pattern recognition is evaluated. The use of Hf0.5Zr0.5O2 (HZO) films within hafnia‐based ferroelectric tunnel junctions (FTJ) presents a promising avenue for next‐generation non‐volatile memory devices. HZO exhibits excellent ferroelectric properties, ultra‐thinness, low power consumption, nondestructive readout, and compatibility with silicon devices. In this study, Mo/HZO/n+ Si devices are investigated, incorporating a 1 nm HfO2 dielectric layer at the top and bottom of the HZO ferroelectric layer. Comparing the FTJ device configurations, it is observed that the metal‐ferroelectric‐dielectric‐semiconductor (MFIS) outperforms the metal‐dielectric‐ferroelectric‐semiconductor (MIFS) in terms of ferroelectricity, displaying a high 2Pr value of ≈69 μC cm−2. Additionally, MFIS exhibits lower leakage current, higher tunneling electro‐resistance ratio, and a thin dead layer during short pulse switching, as confirmed through DC double sweeping of I−V characteristics. The modified half‐bias scheme demonstrates a maximum array size of 191 for MFIS, showcasing its superior performance over MIFS. Synaptic characteristics, including potentiation, depression, paired‐pulse facilitation, spike‐rate‐dependent plasticity, and excitatory postsynaptic current, are measured using MFIS, highlighting its outstanding ferroelectric properties. As a physical reservoir, the FTJ device implements 16 states of 4 bits in reservoir computing. Finally, pattern recognition using a deep learning neural network achieves high accuracy with using the Modified National Institute of Standards and Technology dataset.

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Freely Switching Between Ferroelectric and Resistive Switching in Hf0.5Zr0.5O2 Films and Its Application on High Accuracy On-Chip Deep Neural Networks

Investigation of Endurance Behavior on HfZrO-Based Charge-Trapping FinFET Devices by Random Telegraph Noise and Subthreshold Swing Techniques

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Impact of HfO2 Dielectric Layer Placement in Hf0.5Zr0.5O2‐Based Ferroelectric Tunnel Junctions for Neuromorphic Applications

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

Write Disturb in Ferroelectric FETs and Its Implication for 1T-Fefet AND Memory Arrays