Abstract:High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive random access memory (RRAM), and ferroelectric field effect transistor-based random access memory (FeFET-RAM) are alternatives for replacing hardware kernels such as SRAM-based last level caches (LLC) due to their fast access times and lower leakage. In this paper, we study an ultra-dense FeFET-RAM based on 1-FeFET memory cells, and address potential disturbance issues at the array level. Disturbances are studied experimentally and via simulation. Experimental measurements are well correlated with modeling results suggesting that we have a good understanding of how disturbance issues will manifest themselves. That said, previous WRITE schemes for 1-FeFET arrays may: 1) exacerbate disturbances and 2) significantly degrade figures of merit (FoM) such as WRITE power. To address these issues, we propose the use of columnwise body connections to simultaneously overcome disturbances and reduce leakage currents during WRITES. We present detailed studies on how 1-FeFET memory cells and arrays (with columnwise body bias) fare when compared to traditional SRAM approaches and other emerging technologies. Notably, we benchmark the 1-FeFET memory against 1T + 1FeFET and 2T + 1FeFET designs proposed in early works, as well as SRAM, STTRAM, and RRAM. Our evaluation of a 64×64 FeFET-RAM array shows that the area, READ delay, and static power are reduced by ~5.3×, ~1.5×, and ~74×, respectively, when compared to an SRAM equivalent. Also, the 1-FeFET memory cell design shows ~50× improvements in terms of WRITE energy with respect to STTRAM and RRAM counterparts.

Write Disturb in Ferroelectric FETs and Its Implication for 1T-Fefet AND Memory Arrays

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

A Common Source 3D FeFET with Disturb Inhibition Program and Erase Method

Downsizing and Memory Array Integration of Pt/Srbi2ta2o9/Hf-Al-O/Si Ferroelectric-Gate Field-Effect Transistors

On the Write Schemes and Efficiency of FeFET 1T NOR Array for Embedded Nonvolatile Memory and Beyond

Nonvolatile Ferroelectric Field-Effect Transistors.

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

A Novel Single-Fet Cell And Array Architecture For Ferroelectric Nonvolatile Memories

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO<inf>2</inf>-based 1T1C FeRAM

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications