Abstract:Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149x), ReRAM (1.7x), and CMOS (1.3x) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2x) and dynamic power (2.5x). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM with Hafnia-Based Ferroelectric Capacitors

A computationally efficient compact model for ferroelectric FETs for the simulation of online training of neural networks

Recessed Channel Ferroelectric-Gate Field-Effect Transistor Memory With Ferroelectric Layer Between Dual Metal Gates

Impacts of Ferroelectric Parameters on the Electrical Characteristics of Fefet for Low-Power Logic and Memory Applications

Logic Compatible High-Performance Ferroelectric Transistor Memory

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

The Study of Hysteretic Characteristics of FeFETs for Neuromorphic Computing Using a Closed-Form Analytical Model

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement