Abstract:The mechanism of memory window (MW) enhancement in ferroelectric thin‐film transistors (FETFTs) with amorphous indium‐gallium‐zinc oxide (a‐IGZO) channels is explored. Electron trapping at the Al‐doped HfO2/a‐IGZO interface hinders ferroelectric switching, particularly with a TiN gate. Replacing the TiN gate with a P++‐Si gate mitigates electron accumulation, enhancing MW in FETFTs. This work investigates the mechanism for the memory window (MW) suppression of the ferroelectric‐thin film transistors (FETFTs) with an amorphous indium‐gallium‐zinc (a‐IGZO) channel. a‐IGZO generally has an n‐type character with a high bandgap (>3 eV) and a high density of gap states, hindering the carrier type inversion. Therefore, the negative ferroelectric (FE) bound charges at the FE layer/a‐IGZO interface must be compensated by the positive charges of the oxygen vacancy in the a‐IGZO layer. In contrast, accumulated electrons can compensate for the positive FE‐bound charges. Such a bound charge compensation mechanism complicates the FETFT operation and precise understanding. Experiments and simulations confirm that feasible FE switching in the bottom‐TiN or P++‐Si/Al‐doped HfO2/a‐IGZO/top‐TiN structure can occur only when the countercharges in the a‐IGZO layer compensate the positive and negative bound charges. More importantly, the Al‐doped HfO2/a‐IGZO interface generally involves electron trapping, which hinders FE switching and achieving a MW for the TiN gate case. When replacing the TiN gate with the P++‐Si gate, the suppressed FE polarization by the depolarization effect from the SiO2 interface layer can mitigate electron accumulation. Consequently, the P++‐Si bottom electrode (BE) is more advantageous than the TiN BE regarding a MW of FETFT.

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Hf 0.4 Zr 0.6 O 2 Thickness-Dependent Transfer Characteristics of In x Zn 1- x O y Channel Ferroelectric FETs

Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET

Effect of Top Al2O3 Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al2O3/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Exploration of structural influences on ferroelectric switching characteristics in ferroelectric thin-film transistors

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels