Abstract:Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are non-volatile synaptic elements such as memristors. Key memristor properties include a suitable non-volatile resistance range, continuous linear resistance modulation and symmetric switching. In this work, we demonstrate voltage-controlled, symmetric and analog potentiation and depression of a ferroelectric Hf$_{57}$Zr$_{43}$O$_{2}$ (HZO) field effect transistor (FeFET) with good linearity. Our FeFET operates with a low writing energy (fJ) and fast programming time (40 ns). Retention measurements have been done over 4-bits depth with low noise (1%) in the tungsten oxide (WO$_{x}$) read out channel. By adjusting the channel thickness from 15nm to 8nm, the on/off ratio of the FeFET can be engineered from 1% to 200% with an on-resistance ideally >100 kOhm, depending on the channel geometry. The device concept is using earth-abundant materials, and is compatible with a back end of line (BEOL) integration into complementary metal-oxidesemiconductor (CMOS) processes. It has therefore a great potential for the fabrication of high density, large-scale integrated arrays of artificial analog synapses.

The Study of Hysteretic Characteristics of FeFETs for Neuromorphic Computing Using a Closed-Form Analytical Model

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems

Design-Technology Co-Optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET Based Neuromorphic Computing

Optimal Weight Models for Ferroelectric Synapses Toward Neuromorphic Computing

A computationally efficient compact model for ferroelectric FETs for the simulation of online training of neural networks

Theoretical Study of Carrier Transport in Metal–Ferroelectric–Insulator–Semiconductor Ferroelectric Tunnel Junction Memristor

Artificial Neural Network Models for Metal-Ferroelectric-insulator-semiconductor Ferroelectric Tunnel Junction Memristor

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Bio-Inspired Neurons Based on Novel Leaky-FeFET with Ultra-Low Hardware Cost and Advanced Functionality for All-Ferroelectric Neural Network

Device Modeling and Application Simulation of Ferroelectric-FETS with Dynamic Multi-Domain Behavior

A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

A Multi-Scale Model Linking Microstructure and Macro Electric Behaviors of Ferroelectric Field Effect Transistor

A Comprehensive Model for Ferroelectric FET Capturing the Key Behaviors: Scalability, Variation, Stochasticity, and Accumulation

Ferroelectric FDSOI FET modeling for memory and logic appliations

Two-dimensional Van Der Waals Ferroelectric Field-Effect Transistors Toward Nonvolatile Memory and Neuromorphic Computing

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks