Abstract:Abstract Neuromorphic machines based on spiking neural networks (SNNs) provide a more fascinating platform over traditional computers on building energy-efficient intelligent systems, in which spiking neuron are pivotal components. Recently, memristive neurons, with promising bio-plausibility and density, have been developed, but with limited reliability or bulky capacitors for integration or additional circuits for reset. Here, we propose a novel anti-ferroelectric field-effect transistor (AFeFET) neuron based on the inherent polarization and depolarization of Hf0.2Zr0.8O2 anti-ferroelectric film to meet these challenges. In this neuron, the intrinsic polarization accumulation effect in the Hf0.2Zr0.8O2 film increases the channel current of AFeFET gradually, which implements the integration feature of the neuronal membrane and avoids using external capacitors. Also, the spontaneous depolarization effect in AFeFET emulates the leaky behavior of neurons, saving the hardware overhead of neuron circuits by getting rid of external reset circuits. Moreover, the AFeFET neuron exhibits other comprehensive merits, such as low energy consumption (37 fJ/spike), excellent endurance (>1012), high uniformity and high stability. Using such an AFeFET neuron, we further construct a two-layer fully ferroelectric (784×400×10) SNN combining established FeFET synapse, achieving 96.8% recognition accuracy on MNIST datasets. This work opens the way to emulate spiking neurons with anti-ferroelectric materials and provides a more competitive approach to build high efficient neuromorphic hardware systems.

Bio-Inspired Neurons Based on Novel Leaky-FeFET with Ultra-Low Hardware Cost and Advanced Functionality for All-Ferroelectric Neural Network

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Capacitor-less Stochastic Leaky-FeFET Neuron of Both Excitatory and Inhibitory Connections for SNN with Reduced Hardware Cost

Compact artificial neuron based on anti-ferroelectric transistor

Implementation of Lateral Divisive Inhibition Based on Ferroelectric Fet with Ultra-Low Hardware Cost for Neuromorphic Computing

Ultra-low Power Hf0.5Zr0.5O2 Based Ferroelectric Tunnel Junction Synapses for Hardware Neural Network Applications

Low-Power and High-Speed HfLaO-based FE-TFTs for Artificial Synapse and Reconfigurable Logic Applications

Mimicking biological neurons with a nanoscale ferroelectric transistor.

Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks

A Novel Ferroelectric FET-Based Adaptively-Stochastic Neuron for Stimulated-Annealing Based Optimizer with Ultra-Low Hardware Cost

A Biomimetic Tunnel FET-Based Spiking Neuron for Energy-Efficient Neuromorphic Computing with Reduced Hardware Cost

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing

CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.

Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing.

1T Spiking Neuron Using Ferroelectric Junctionless FET with Ultra-Low Energy Consumption of 24 aJ/Spike

The Study of Hysteretic Characteristics of FeFETs for Neuromorphic Computing Using a Closed-Form Analytical Model

A Tunable Leaky Integrate-and-fire Neuron Based on One Neuromorphic Transistor and One Memristor