Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Implementation of Lateral Divisive Inhibition Based on Ferroelectric Fet with Ultra-Low Hardware Cost for Neuromorphic Computing

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Bio-Inspired Neurons Based on Novel Leaky-FeFET with Ultra-Low Hardware Cost and Advanced Functionality for All-Ferroelectric Neural Network

Low-Power and High-Speed HfLaO-based FE-TFTs for Artificial Synapse and Reconfigurable Logic Applications

Ultra-low Power Hf0.5Zr0.5O2 Based Ferroelectric Tunnel Junction Synapses for Hardware Neural Network Applications

A Novel Ferroelectric FET-Based Adaptively-Stochastic Neuron for Stimulated-Annealing Based Optimizer with Ultra-Low Hardware Cost

A van der Waals Synaptic Transistor Based on Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and 2D Tungsten Disulfide

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Van Der Waals Ferroelectric Transistors: the All-Round Artificial Synapses for High-Precision Neuromorphic Computing

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing

CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

Dual-pulse Disturb-Free Programming Scheme for FeFET Based Neuromorphic Computing

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Compact artificial neuron based on anti-ferroelectric transistor

Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing

Optimal Weight Models for Ferroelectric Synapses Toward Neuromorphic Computing

Design-Technology Co-Optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET Based Neuromorphic Computing

Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory for Binary Neural Networks

Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing