Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory for Binary Neural Networks

Boyi Fu,Jin Luo,Weikai Xu,Qianqian Huang,Ru Huang
DOI: https://doi.org/10.1109/cstic58779.2023.10219283
2023-01-01
Abstract:Ferroelectric FETs (FeFETs) have been applied to computing-in-memories (CIMs) for binary neural networks (BNNs) because of the advantages of ultra-low energy cost, while suffering from large output variation or write disturb. This work proposes a novel FeFET-based CIM for BNNs, reducing the output variation by exploiting charge-domain scheme and avoiding write disturb by exploiting additional access transistors. Simulation results show that compared with conventional FeFET-based current-domain design, the proposed design can improve accuracy by 20% on MNIST by reducing the output variation. Compared with previous SRAM-based and RRAM-based CIM for BNNs, the proposed design can reduce energy cost by 54% and 98%, showing its great potential for edge AI applications.
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