Abstract:By combining ferroelectric domain switching and oxygen vacancy migration, a ferroelectric tunnel junction artificial synapse with intrinsic nonlinearity as low as 0.13–0.17 and symmetric weight updating is developed, which greatly improved the classification accuracy of neural network hardware in supervised learning to 96.7% and enhanced robustness to noise during unsupervised learning. Artificial synapses can boost neuromorphic computing to overcome the inherent limitations of von Neumann architecture. As a promising memristor candidate, ferroelectric tunnel junctions (FTJ) enable the authors to successfully emulate spike‐timing‐dependent synapses. However, the nonlinear and asymmetric synaptic weight update under repeated presynaptic stimulation hampers neuromorphic computing by favoring the runaway of synaptic weights during learning. Here, the authors demonstrate an FTJ whose conductivity varies linearly and symmetrically by judiciously combining ferroelectric domain switching and oxygen vacancy migration. The artificial neural network based on this FTJ‐synapse achieves classification accuracy of 96.7% during supervised learning, which is the closest to the maximum theoretical value of 98% achieved to date. This artificial synapse also demonstrates stable unsupervised learning in a noisy environment for its well‐balanced spike‐timing‐dependent plasticity response. The novel concept of controlling ionic migration in ferroelectric materials paves the way toward highly reliable and reproducible supervised and unsupervised learning strategies.

Ultra-low Power Hf0.5Zr0.5O2 Based Ferroelectric Tunnel Junction Synapses for Hardware Neural Network Applications

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses

High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing

A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O2 films with uniform polarization and high Curie temperature

CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

A van der Waals Synaptic Transistor Based on Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and 2D Tungsten Disulfide

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

High‐Performance Neuromorphic Computing Based on Ferroelectric Synapses with Excellent Conductance Linearity and Symmetry

High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Low-Power and High-Speed HfLaO-based FE-TFTs for Artificial Synapse and Reconfigurable Logic Applications

Van Der Waals Ferroelectric Transistors: the All-Round Artificial Synapses for High-Precision Neuromorphic Computing

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Ferroelectric artificial synapses for high-performance neuromorphic computing: Status, prospects, and challenges

Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing

The Flexible Aluminum-doped Hafnium Oxide ferroelectric synapse devices for neuromorphic computing

Design-Technology Co-Optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET Based Neuromorphic Computing