Abstract:HfO2-based ferroelectric field-effect transistors (FeFETs) are a promising candidate for multilevel memory manipulation and brain-like computing due to the multi-domain properties of the HfO2 FE films based polycrystalline structure. Although there have been many reports on the working mechanism of the HfO2-based FeFET and improving its reliability, the impact of multi-domain effect on the effective carrier mobility (μchannel) has not been carried out yet. The effective μchannel determines the level of readout current and affects the accuracy of the precision of peripheral circuit. In this work, FeFETs with HfZrOx FE gate dielectric were fabricated, and the effect of write (or erase) pulses with linear gradient variation on the effective μchannel was studied. For the multiple downward polarization under write pulses, the μchannel degrades as the domains gradually switch to downward. This is mainly due to the enhancement of the scattering effect induced by the positive charges (e.g., oxygen vacancies ) trapping and the increase of channel carrier density. For the erase pulses, the μchannel increases as the domains gradually reverse to upward, which is mainly due to the reduction of the scattering effect induced by the detrapping of positive charges and the decrease of channel carrier density. In addition, the modulation effect of multilevel polarization states on μchannel is verified by numerical simulation. This effect provides a new idea and solution for the development of low power HfO2-based FeFETs in neuromorphic computing.

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO<inf>2</inf>-based 1T1C FeRAM

Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts

Interval time dependent wake-up effect of HfZrO ferroelectric capacitor

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

New Insights into Memory Window of Ferroelectric FET Impacted by Read Operations with Awareness of Polarization Switching Dynamics

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films