Abstract:A comprehensive quantitative root cause study of defect evolution leading to memory window closure from a charge balance and charge trapping perspective throughout all phases of a Si channel Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect-transistor (FEFET) is reported. Starting with the first write pulse, an excessive SiO2 interlayer field is revealed that triggers the creation of defect levels Dit in excess of 1015 cm−2 eV−1 at the HZO–SiO2 interface screening ferroelectric (FE) polarization while enabling FE switching. Under subsequent early bipolar fatigue cycling (up to 104 cycles), defect creation commences at the SiO2–Si interface due to the high injected hole fluence (0.39 C/m2) during each stress pulse causing negative bias instability (NBI), which shifts the threshold voltage of the erase state VT,ERS by −0.3 V with accrual of permanently captured charge Nit of up to +5 × 10−3 C/m2 (3 × 1012 cm−2). Subsequently, Nit NBI generation at the SiO2–Si interface accelerates reaching levels of +7 × 10−2 C/m2, locking both FEFET program and erase drain current vs gate–source-voltage (ID–VGS) characteristics in the FEFET on-state inducing memory window closure at 105 cycles while FE switching (switched polarization Psw = 0.34 C/m2) remains essentially intact. These findings guide the down-selection toward suitable semiconductor/FE systems for charge balanced, reliable, and high endurance FEFETs.

New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective

New Insights into Memory Window of Ferroelectric FET Impacted by Read Operations with Awareness of Polarization Switching Dynamics

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO<inf>2</inf>-based 1T1C FeRAM

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Impacts of Ferroelectric Parameters on the Electrical Characteristics of Fefet for Low-Power Logic and Memory Applications

Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%), and Self-Tracking Circuit Design

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure