Abstract:In this work, we report a planar Si-based ferroelectric field-effect transistor (FEFET) characterized by a high memory window (MW) of 4.79 V, ten-year retention, and pass disturb-free characteristics. This achievement is realized through the use of a 20-nm-thick laminated Hf Zr0.5O2 (L-HZO) film with Al2O3 (AO)-insertion layers (ILs). The 2.4-Å-thick AO-ILs effectively severed the bulk-HZO film and scaled down each FE-thickness ( ) in the L-HZO. This resulted in suppression of non-FE monoclinic phase formation to less than 10%, and more notably, an increase in the coercive field ( ) within the FE stack. With an increase in the number of HZO-lamination ( ), the was enhanced by 76% in L-HZO ( = 4) compared to single-HZO (S-HZO). This led to an increase in effective polarization ( ), representing the portion of remnant polarization ( ) uncompensated by channel-injected charge, thereby validly influencing the threshold voltage ( ) shift of FEFET. The augmented in L-HZO (350% increase compared to S-HZO) was directly confirmed through a more pronounced shift by the change of , which was 230% steeper in L-HZO compared to S-HZO. The revealed mechanism behind the enhanced MW and reliability in laminated-FE, stemming from the increased rooted in enlarged , paves the way for designing the FE-stack for high-density memory or neuromorphic applications.

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO<inf>2</inf>-based 1T1C FeRAM

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

Interval time dependent wake-up effect of HfZrO ferroelectric capacitor

New Insights into Memory Window of Ferroelectric FET Impacted by Read Operations with Awareness of Polarization Switching Dynamics

New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.

Improvement of Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET by Inserting Al2O3/HfO2/Al2O3 Top Interlayer

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM