Abstract:The mechanism of memory window (MW) enhancement in ferroelectric thin‐film transistors (FETFTs) with amorphous indium‐gallium‐zinc oxide (a‐IGZO) channels is explored. Electron trapping at the Al‐doped HfO2/a‐IGZO interface hinders ferroelectric switching, particularly with a TiN gate. Replacing the TiN gate with a P++‐Si gate mitigates electron accumulation, enhancing MW in FETFTs. This work investigates the mechanism for the memory window (MW) suppression of the ferroelectric‐thin film transistors (FETFTs) with an amorphous indium‐gallium‐zinc (a‐IGZO) channel. a‐IGZO generally has an n‐type character with a high bandgap (>3 eV) and a high density of gap states, hindering the carrier type inversion. Therefore, the negative ferroelectric (FE) bound charges at the FE layer/a‐IGZO interface must be compensated by the positive charges of the oxygen vacancy in the a‐IGZO layer. In contrast, accumulated electrons can compensate for the positive FE‐bound charges. Such a bound charge compensation mechanism complicates the FETFT operation and precise understanding. Experiments and simulations confirm that feasible FE switching in the bottom‐TiN or P++‐Si/Al‐doped HfO2/a‐IGZO/top‐TiN structure can occur only when the countercharges in the a‐IGZO layer compensate the positive and negative bound charges. More importantly, the Al‐doped HfO2/a‐IGZO interface generally involves electron trapping, which hinders FE switching and achieving a MW for the TiN gate case. When replacing the TiN gate with the P++‐Si gate, the suppressed FE polarization by the depolarization effect from the SiO2 interface layer can mitigate electron accumulation. Consequently, the P++‐Si bottom electrode (BE) is more advantageous than the TiN BE regarding a MW of FETFT.

New Insights into Memory Window of Ferroelectric FET Impacted by Read Operations with Awareness of Polarization Switching Dynamics

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet

New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO<inf>2</inf>-based 1T1C FeRAM

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

Impacts of Ferroelectric Parameters on the Electrical Characteristics of Fefet for Low-Power Logic and Memory Applications

Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

Impact of Hysteresis Curve on Subthreshold Swing in Ferroelectric FET

Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Exploration of structural influences on ferroelectric switching characteristics in ferroelectric thin-film transistors

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor