Abstract:Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Exploration of structural influences on ferroelectric switching characteristics in ferroelectric thin-film transistors

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Key Technologies for Feram Backend Module

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

New Insights into Memory Window of Ferroelectric FET Impacted by Read Operations with Awareness of Polarization Switching Dynamics

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Model and key fabrication technologies for FeRAM

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Boosting Polarization Switching-Induced Current Injection by Mechanical Force in Ferroelectric Thin Films

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM

New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO<inf>2</inf>-based 1T1C FeRAM

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt Structure

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric Fet