Abstract:Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

Model and key fabrication technologies for FeRAM

Key Technologies for Feram Backend Module

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

Reactive Ion Etching And Ion Beam Etching For Ferroelectric Memories

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

A Silicon-Based PT/PZT/PT Sandwich Structure for Memory Devices

Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Research on Circuit Design Techniques for 1 kbit Ferroelectric Random Access Memory

Fabrication and Investigation of Ferroelectric Memristors with Various Synaptic Plasticities

An Improved Behavioral Model of Ferroelectric Capacitors

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

A 9mb HZO-Based Embedded FeRAM with 10-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

FeRAM: A Paradigm of Advanced Data Storage Technology

An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design

Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM with Hafnia-Based Ferroelectric Capacitors

Design of a 4 k Bit Ferroelectric Memory

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory