Abstract:Ternary content addressable memories (TCAMs) are a special form of computing-in-memory (CiM) circuits that aim to address the so-called memory wall issues by merging the parallel search function with memory blocks. Due to the content addressing nature, TCAMs have been widely utilized for search intensive tasks in low-power, data analytic applications, such as IP routers, associative memories, and learning models. While most state-of-the-art TCAM designs focus on improving the TCAM density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on reducing and optimizing the energy consumption of the NVM based TCAM. In this paper, by exploiting the Ferroelectric FET (FeFET) as a representative NVM, we propose two compact and energy-aware designs of ferroelectric TCAMs for low power applications. We first introduce a novel 2FeFET based XOR-like gate structure that can also be adopted to other NVMs, and then leverage the structure to propose two TCAM designs that achieve high energy efficiency by either reducing the associated precharge overhead (2FeFET-1T cell), or eliminating the precharge phase typically required by TCAMs (2FeFET-2T cell). We evaluate and compare the designs w.r.t area, search energy and delay at array level with other existing designs, and benchmark the proposed TCAM designs in an associative memory based GPU architecture. The results suggest that the proposed 2FeFET-1T/2FeFET-2T TCAM design consumes 3.03X/8.08X less search energy than the conventional 16T CMOS TCAM, while the proposed design cell area is only 32.1%/39.3% of the latter. Compared with the state-of-the-art 2FeFET only TCAM array, our proposed designs still achieve 1.79X and 4.79X search energy reduction, respectively. Moreover, our proposed designs can achieve, on average, 45.2%/51.5% energy saving compared with the conventional GPU based architecture at the application level.

Design of a 4 k Bit Ferroelectric Memory

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

Research on Circuit Design Techniques for 1 kbit Ferroelectric Random Access Memory

A ferroelectric fin diode for robust non-volatile memory

Nonvolatile Memory Design Based on Ferroelectric FETs.

Logic Compatible High-Performance Ferroelectric Transistor Memory

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

High-speed and Low-Power Feram Utilising Merged BL/PL Array Architecture with Twin-Bitline-driven Scheme

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly.

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric Memory

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.