Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric Memory

Yannan Xu,Yang Yang,Shengjie Zhao,Tiancheng Gong,Pengfei Jiang,Yuan Wang,Peng Yuan,Zhiwei Dang,Yuting Chen,Shuxian Lv,Yaxin Ding,Yan Wang,Jinshun Bi,Qing Luo
DOI: https://doi.org/10.1109/ted.2021.3139054
IF: 3.1
2022-04-01
IEEE Transactions on Electron Devices
Abstract:In this article, we presented a new concept of ferroelectric (FE) modulated antiferroelectric (AFE) memory with independent two-step state switching and large polarization as a promising option for multibit storage in advanced technology nodes. Based on the Landau–Ginzburg–Devonshire (LGD) theory, four nonvolatile states of AFE with the built-in field can be obtained, and the step-by-step switching among four states was successfully simulated through pulse engineering; then, stable nonvolatile 2-bit storage was experimentally demonstrated in FE/AFE/FE capacitor device, and 0.97-MV/cm bipolar built-in field introduced by FE polarization switching was extracted. The FE + AFE device showed double-peak coercive electric field (${E}_{c}$ ) distribution and large remanent polarization (${P}_{r}$ ) of $16.9 ~\mu \text{C}$ /cm2 with good process stability. Finally, benefitting from the independently step-by-step switching and large density of effective FE domain, the improved multibit storage reliability was verified by kinetic Monte Carlo (KMC) modeling compared to conventional multibit technology.
engineering, electrical & electronic,physics, applied
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