Abstract:Artificial intelligence has made remarkable advancements in recent years, leading to the development of algorithms and models capable of handling ever-increasing amounts of data. The computational demands of these algorithms necessitate circuit and architecture designs that go beyond the von-Neumann paradigm. Content addressable memories (CAMs), which implement parallel associative search functionality within memory blocks to overcome the memory wall bottleneck, have proven to be effective for data-intensive tasks. While current CAM designs have achieved higher storage density and energy efficiency than their CMOS-based counterparts by leveraging emerging non-volatile memories (NVM), most of these implementations are limited to binary storage cells. In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM designs enable multi-bit associative search functions and achieve better energy efficiency and performance than existing FeFET-based CAM designs. We validated the functionality of our proposed designs by achieving 3 bits per cell CAM functionality, resulting in 3x improvement in storage density. The area per bit of the proposed SEE-MCAM cell is 8% of the conventional CMOS CAM. We thoroughly investigated the scalability and robustness of the proposed design. Evaluation results suggest that the proposed 2FeFET-1T SEE-MCAM achieves 9.8x more energy efficiency and 1.6x less search latency compared to the CMOS CAM, respectively. When compared to existing MCAM designs, the proposed SEE-MCAM can achieve 8.7x and 4.9x more energy efficiency than ReRAM-based and FeFET-based MCAMs, respectively. Benchmarking results show that our approach provides up to 3 orders of magnitude improvement in speedup and energy efficiency over a GPU implementation in accelerating a novel quantized hyperdimensional computing (HDC) application.

FeFET-Based Logic-in-Memory Supporting SA-Free Write-Back and Fully Dynamic Access with Reduced Bitline Charging Activity and Recycled Bitline Charge

FeFET-based low-power bitwise logic-in-memory with direct write-back and data-adaptive dynamic sensing interface

In-Memory Multi-Bit Multiplication and Accumulation (MAC) Using FeFET for Energy Efficient IoT

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Logic Compatible High-Performance Ferroelectric Transistor Memory

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations

Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design

Efficient Parallel Multi‐Bit Logic‐in‐Memory Based on a Ultrafast Ferroelectric Tunnel Junction Memristor

Enabling Normally-off In-Situ Computing with a Magneto-Electric FET-based SRAM Design

Computing in memory with FeFETs

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory