Abstract:Bitwise logic-in-memory (BLiM) is a promising approach to efficient computing in data-intensive applications by reducing data movement between memory and processing units. However, existing BLiM techniques have challenges towards higher energy efficiency and speed: (i) DC power in computing and result sensing is significant in most existing RRAM and MRAM based BLiM solutions; (ii) before the computation result could be stored back to the same memory array, existing BLiM has to sense the result first, at the cost of extra power and latency due to the sense amplifiers (SAs). Targeting at higher energy efficiency and speed, this work proposes a new BLiM approach in 2-transistor/ cell (2T/C) and 3T/C topologies based on ferroelectric field-effect transistors (FeFETs), supporting a variety of computing functions. For the first time, this new approach supports SA-free direct write-back, and consumes no static power for computing and sensing with proposed fully dynamic computing and sensing schemes. Another highlight is that this work further minimizes the dynamic power by (i) reducing the chance of bitline charging activities and (ii) recycling the bitline charge in sensing multi-operand operations. Compared with prior BLiM methods based on nonvolatile memories, evaluation shows 3.0x–100x latency and 1.3x–200x energy improvement for typical in- memory XOR operation, which further leads to 3.0x–58x and 3.2x–78x savings of latency and energy, respectively, for the application of advanced-encryption standard (AES).

Enabling Normally-off In-Situ Computing with a Magneto-Electric FET-based SRAM Design

Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

MERAM: Non-Volatile Cache Memory Based on Magneto-Electric FETs

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

Towards Efficient Memory Architectures: Low-Power Noise-Immune RRAM

Exploring a SOT-MRAM Based In-Memory Computing for Data Processing.

FeFET-Based Logic-in-Memory Supporting SA-Free Write-Back and Fully Dynamic Access with Reduced Bitline Charging Activity and Recycled Bitline Charge

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM

Ultra Low Power Magnetic Flip-Flop Based on Checkpointing/Power Gating and Self-Enable Mechanisms

Leveraging Spintronic Devices for Ultra-Low Power In-Memory Computing: Logic and Neural Network.

Writing-only in-MRAM computing paradigm for ultra-low power applications

An Energy-Efficient Computing-in-Memory (cim) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs

An energy-efficient design of ternary SRAM using GNRFETs

Design and Evaluation of a Spintronic In-Memory Processing Platform for Nonvolatile Data Encryption

Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology