Abstract:The separation of memory and computing units in the von Neumann architecture leads to undesirable energy consumption due to data movement and insufficient memory bandwidth. Energy-efficient in-memory computing platforms have the potential to address such issues. Due to its non-volatility and advantageous features over CMOS (such as low power, near-zero leakage current and high integration density), spin-based devices have been advocated for in-memory computing. This paper proposes a field-free Spin Orbit Torque (FF-SOT) MRAM based computing-in-memory (CiM) scheme that realizes XNOR/XOR logic and a cascading adder. This novel FF-SOT-CiM design does not require expensive peripheral circuits for computation while using the same memory cell design as a SOT-MRAM. Furthermore, FF-SOT-CiM does not require additional write cycles to save the result of its computations in the memory. The design offers higher write speed and; lower operating energy compared to CiM schemes based on other technologies; it also alleviates the source degeneration effect by leveraging an advanced switching mechanism. Extensive simulation results show that the proposed FF-SOT-CiM achieves up to 3.1x (2.6x) latency (energy) reduction compared to SRAM-based CiM, with negligible hardware overhead when performing in-memory XOR. ADD operations; the proposed FF-SOT-CiM can be to 5.0X and 1.5X faster and 3.4X and 1.1X more energy efficient than existing STT-based and FeFET-based schemes, respectively.

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

Exploring a SOT-MRAM Based In-Memory Computing for Data Processing.

Leveraging Spintronic Devices for Ultra-Low Power In-Memory Computing: Logic and Neural Network.

An Energy-Efficient Computing-in-Memory (cim) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs

In-Memory Computing with Spintronic Devices

IMCS2: Novel Device-to-Architecture Co-Design for Low-Power In-Memory Computing Platform Using Coterminous Spin Switch

Writing-only in-MRAM computing paradigm for ultra-low power applications

Design and Evaluation of a Spintronic In-Memory Processing Platform for Nonvolatile Data Encryption

Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design

Enabling Normally-off In-Situ Computing with a Magneto-Electric FET-based SRAM Design

Design of an Process In-Memory Full Adder Based on Voltage-Controlled Spin Orbit Torque Magnetic Random Access Memory

Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

RIMPA: A New Reconfigurable Dual-Mode In-Memory Processing Architecture with Spin Hall Effect-Driven Domain Wall Motion Device

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

Computing-in-Memory Paradigm Based on STT-MRAM with Synergetic Read/Write-Like Modes

Design of an Area-Efficient Computing in Memory Platform Based on STT-MRAM

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

A 6T-3M SOT-MRAM for In-Memory Computing with Reconfigurable Arithmetic Operations.

HielM: Highly Flexible In-Memory Computing Using STT MRAM.

Configurable in-memory computing architecture based on dual-port SRAM