Abstract:Spintronics is a growing research field that focuses on exploring materials and devices that take advantage of the electron's "spin" to go beyond charge based devices. The most impactful spintronic device to date is a highly sensitive magnetic field sensor, the spin-valve, that allowed for a 10,000-fold increase in the storage capacity of hard disk drives since it was first introduced in a magnetic recording read head in 1997. In about 2007, the original spin-valve that was based on spin-dependent scattering in metallic magnetic/non-magnetic interfaces evolved to a closely related device in which the essential physics changed to that of spin-dependent tunneling across ultra-thin insulating layers placed between magnetic electrodes, but the basic spin-engineered structure remained largely unchanged. These latter structures were proposed in 1995 as potential memory elements for a magnetic random-access memory (MRAM) and the first demonstration of this possibility was made in 1999. It was only recently (about 2019) that MRAM became a mainstream foundry technology. Compared with most conventional charge based electronic devices, spintronic devices have the advantage of non-volatility, low-power consumption, and scalability to smaller dimensions. For these reasons, spintronic devices are highly attractive for next-generation information memory-storage and are promising for advanced applications such as in-memory computing. Furthermore, spintronics allows for a unique high capacity, non-volatile, solid-state memory-storage device that relies on devices that can store multiple digital bits in the form of a series of chiral domain walls that are moved at high-speed using nanosecond long current pulses along magnetic nanowires. These devices also enable synaptic functionalities in neuromorphic computing and are therefore, potential hardware candidates for artificial intelligence. In this review article, recent advances in multi-state spintronic devices are discussed. The review starts with an introduction followed by a discussion on using domain-walls for achieving multiple states for memory and neuromorphic computing. In the next section, achieving multiple levels based on domain nucleation are discussed. Subsequent discussions review the use of magnetic pillars, and other schemes for achieving high-density memory. The prospects of spintronic devices in neuromor-phic computing for artificial intelligence (AI) are also presented. The outlook and directions for new research are provided at the end.

In-Memory Computing with Spintronic Devices

Leveraging Spintronic Devices for Ultra-Low Power In-Memory Computing: Logic and Neural Network.

Design and Evaluation of a Spintronic In-Memory Processing Platform for Nonvolatile Data Encryption

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

Spintronic Memories: from Memory to Computing-in-Memory

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

Emerging Spintronic Devices: from Ultra-High-Density Memory to Logic-In-Memory

IMCS2: Novel Device-to-Architecture Co-Design for Low-Power In-Memory Computing Platform Using Coterminous Spin Switch

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Spintronic memristors for computing

Spintronics for Energy- Efficient Computing: An Overview and Outlook

Energy Efficient In-Memory Computing Platform Based on 4-Terminal Spin Hall Effect-Driven Domain Wall Motion Devices

Exploring a SOT-MRAM Based In-Memory Computing for Data Processing.

In-memory Computing with Emerging Nonvolatile Memory Devices

Leveraging Spintronic Devices for Efficient Approximate Logic and Stochastic Neural Networks

Spintronic devices for high-density memory and neuromorphic computing - A review

Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

An Energy-Efficient Computing-in-Memory (cim) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs

Spintronic Memory-Based Reconfigurable Computing

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing