Abstract:Abstract The field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.

Leveraging Spintronic Devices for Ultra-Low Power In-Memory Computing: Logic and Neural Network.

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Spin-NeuroMem: A Low-Power Neuromorphic Associative Memory Design Based on Spintronic Devices

Spintronics for Energy- Efficient Computing: An Overview and Outlook

Spintronic memristors for computing

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

In-memory Computing with Emerging Nonvolatile Memory Devices

High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network

Enabling Normally-off In-Situ Computing with a Magneto-Electric FET-based SRAM Design

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Ultra Low Power Associative Computing with Spin Neurons and Resistive Crossbar Memory

Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design

A survey of in-spin transfer torque MRAM computing

Robust and Programmable Logic-In-Memory Devices Exploiting Skyrmion Confinement and Channeling Using Local Energy Barriers

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

Spintronic devices: a promising alternative to CMOS devices

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

Tailoring skyrmion motion dynamics via magnetoelectric coupling: Toward highly energy-efficient and reliable non-volatile memory applications

Reconfigurable spintronic logic gate utilizing precessional magnetization switching