Abstract:Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect transistors (FeFETs). A comparative studies of various conventional neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed by successful realization of the proposed computing approaches. Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von-Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are getting developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer a rich set of device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect Transistors (FeFETs). A comparative studies of various unconventional and brain-inspired neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed for these device technologies.

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Nonvolatile memristive logic: a road to in-memory computing

In-memory Computing with Emerging Nonvolatile Memory Devices

Nonvolatile Memristor As a New Platform for Non-Von Neumann Computing

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

Reconfigurable Nonvolatile Boolean Logic with One-Transistor-two-memristor for In-Memory Computing

Highly Efficient Neuromorphic Computing Systems with Emerging Nonvolatile Memories

Neuromorphic Computing Systems with Emerging Nonvolatile Memories: A Circuits and Systems Perspective

Circuit Design for Beyond Von Neumann Applications Using Emerging Memory: from Nonvolatile Logics to Neuromorphic Computing.

Metal Oxide Resistive Random Access Memory Based Synaptic Devices for Brain-Inspired Computing

Ferroelectric materials for neuroinspired computing applications

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Efficient 16 Boolean Logic and Arithmetic Based on Bipolar Oxide Memristors

Boolean Logic Computing Based on Neuromorphic Transistor

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

Emerging Memory Devices for Neuromorphic Computing

Memristive Combinational And Sequential Logic For In-Memory Computing

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Logic Circuit and Memory Design for In-Memory Computing Applications Using Bipolar RRAMs