Abstract:Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect transistors (FeFETs). A comparative studies of various conventional neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed by successful realization of the proposed computing approaches. Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von-Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are getting developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer a rich set of device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect Transistors (FeFETs). A comparative studies of various unconventional and brain-inspired neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed for these device technologies.

Circuit Design for Beyond Von Neumann Applications Using Emerging Memory: from Nonvolatile Logics to Neuromorphic Computing.

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

The Impact of Emerging Technologies on Architectures and System-level Management: Invited Paper.

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Neuromorphic Computing Systems with Emerging Nonvolatile Memories: A Circuits and Systems Perspective

Highly Efficient Neuromorphic Computing Systems with Emerging Nonvolatile Memories

In-memory Computing with Emerging Nonvolatile Memory Devices

Emerging Memory Devices for Neuromorphic Computing

Emerging Memory-Based Chip Development for Neuromorphic Computing: Status, Challenges, and Perspectives

Nonvolatile Memristor As a New Platform for Non-Von Neumann Computing

Building Neuromorphic Circuits with Memristive Devices

(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices

Design and Implementation of a Flexible Neuromorphic Computing System for Affective Communication Via Memristive Circuits

Memory That Never Forgets: Emerging Nonvolatile Memory and the Implication for Architecture Design

Emerging Memristive Devices for Brain-Inspired Computing and Artificial Perception

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

An Overview On Memristor Crossabr Based Neuromorphic Circuit And Architecture

A Co-design view of Compute in-Memory with Non-Volatile Elements for Neural Networks

Device and Materials Requirements for Neuromorphic Computing

Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.